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TK65G10N1

INCHANGE
Part Number TK65G10N1
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 9, 2020
Detailed Description isc N-Channel MOSFET Transistor TK65G10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤4.5mΩ. (VGS = 10 V) ·Enh...
Datasheet PDF File TK65G10N1 PDF File

TK65G10N1
TK65G10N1

Overview
isc N-Channel MOSFET Transistor TK65G10N1 ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤4.
5mΩ.
(VGS = 10 V) ·Enhancement mode: Vth =2.
0 to 4.
0V (VDS = 10 V, ID=1.
0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 65 A IDM Drain Current-Single Pulsed 283 A PD Total Dissipation @TC=25℃ 156 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL...


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