Power MOSFET. IXTP130N065T2 Datasheet

IXTP130N065T2 MOSFET. Datasheet pdf. Equivalent


Part IXTP130N065T2
Description Power MOSFET
Feature Preliminary Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rate.
Manufacture IXYS
Datasheet
Download IXTP130N065T2 Datasheet


Preliminary Technical Information TrenchT2TM Power MOSFET N IXTP130N065T2 Datasheet
isc N-Channel MOSFET Transistor IXTP130N065T2 ·FEATURES ·S IXTP130N065T2 Datasheet
Recommendation Recommendation Datasheet IXTP130N065T2 Datasheet




IXTP130N065T2
Preliminary Technical Information
TrenchT2TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA130N065T2
IXTP130N065T2
VDSS =
ID25 =
RDS(on)
65V
130A
6.6mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
Maximum Ratings
65
V
65
V
± 20
V
130
A
75
A
330
A
65
A
600
mJ
250
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
260
1.13 / 10
°C
°C
Nm/lb.in.
2.5
g
3.0
g
Characteristic Values
Min. Typ. Max.
65
V
2.0
4.0 V
±200 nA
5 μA
150 μA
6.6 mΩ
TO-263 (IXTA)
G
S
TO-220 (IXTP)
(TAB)
GD S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z 175°C Operating Temperature
z Avalanche rated
z High current handling capability
z Low RDS(on)
Advantages
z Easy to mount
z Space savings
z High power density
Applications
z Automotive
- Motor Drives
- 12V Battery
- ABS Systems
z DC/DC Converters and Off-line UPS
z Primary- Side Switch
z High Current Switching Applications
© 2008 IXYS CORPORATION, All rights reserved
DS100050(10/08)



IXTP130N065T2
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 5Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
38
64
S
4800
pF
600
pF
90
pF
11
ns
42
ns
20
ns
17
ns
79
nC
22
nC
23
nC
0.50
0.60 °C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive, Pulse width limited by TJM
VSD
IF = 65A, VGS = 0V, Note 1
trr
IF = 65A, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 33V
Characteristic Values
Min. Typ. Max.
130 A
520 A
1.3 V
41
ns
2.9
A
60
nC
IXTA130N065T2
IXTP130N065T2
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Notes: 1. Pulse test, t 300μs; duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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