Power MOSFET. IXTP140N12T2 Datasheet

IXTP140N12T2 MOSFET. Datasheet pdf. Equivalent


Part IXTP140N12T2
Description Power MOSFET
Feature TrenchT2TM Power MOSFET Advance Technical Information IXTA140N12T2 IXTP140N12T2 VDSS = 120V ID25 .
Manufacture IXYS
Datasheet
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IXTP140N12T2
TrenchT2TM
Power MOSFET
Advance Technical Information
IXTA140N12T2
IXTP140N12T2
VDSS = 120V
ID25 = 140A
RDS(on) 10m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 175C
TJ = 25C to 175C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
120
V
120
V
20
V
30
V
140
A
350
A
70
A
1.3
J
577
W
-55 ... +175
175
-55 ... +175
 C
 C
 C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
120
V
2.5
4.5 V
            200 nA
10 A
500 A
8
10 m
G
S
D (Tab)
TO-220AB (IXTP)
GDS
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
International Standard Packages
175°C Operating Temperature
Avalanche Rated
Low RDS(on)
Fast Intrinsic Rectifier
High Current Handling Capability
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Synchronous Rectification
DC/DC Converters and Off-Line UPS
Primary- Side Switch
High Current Switching Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100829A(5/17)



IXTP140N12T2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 2(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
66
110
S
9700
pF
850
pF
58
pF
27
ns
30
ns
39
ns
17
ns
174
nC
52
nC
40
nC
0.50
0.26 C/W
 C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 0.5 • ID25, VGS = 0V
IRM
-di/dt = 100A/s
QRM
VR = 60V
Characteristic Values
Min. Typ. Max.
140 A
560 A
1.4 V
65
ns
13
A
430
nC
IXTA140N12T2
IXTP140N12T2
TO-263 Outline
Pins:
1 - Gate
2,4 - Drain
3 - Source
TO-220 Outline
Notes: 1. Pulse test, t 300s, duty cycle, d  2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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