Preliminary Technical Information
TrenchMVTM
IXTC160N10T
Power MOSFET
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 =
RDS(on) ≤
100 83 7.5
V A mΩ
Symbol
VDSS VDGR
VGSM
ID25 IL IDM
IAR EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD VISOL
FC Weight
Test Conditions
TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
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