Silicon Transistor. MMBT4401K Datasheet

MMBT4401K Transistor. Datasheet pdf. Equivalent


Part MMBT4401K
Description PNP Epitaxial Silicon Transistor
Feature MMBT4401K PNP Epitaxial Silicon Transistor MMBT4401K PNP Epitaxial Silicon Transistor Switching Tra.
Manufacture Fairchild Semiconductor
Datasheet
Download MMBT4401K Datasheet


MMBT4401K PNP Epitaxial Silicon Transistor MMBT4401K PNP Ep MMBT4401K Datasheet
Recommendation Recommendation Datasheet MMBT4401K Datasheet




MMBT4401K
MMBT4401K
PNP Epitaxial Silicon Transistor
Switching Transistor
February 2005
3
Marking
2
SOT-23
1
1. Base 2. Emitter 3. Collector
2XK
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Value
60
40
6
600
350
150
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
IBEV
ICEX
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage
Base Cut-off Current
Collector Cut-off Current
DC Current Gain *
VCE (sat) Collector-Emitter Saturation Voltage *
VBE (sat) Base-Emitter Saturation Voltage *
fT
Current Gain Bandwidth Product
Cob
Output Capacitance
tON
Turn On Time
tOFF
Turn Off Time
* Pulse Test: Pulse Width300µs, Duty Cycle2%
IC = 100µA, IE = 0
IC = 1.0mA, IB = 0
IE = 100µA, IC = 0
VCE = 35V, VEB = 0.4V
VCE = 35V, VEB = 0.4V
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 150mA
VCE = 2V, IC = 500mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
I C= 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 20mA, VCE = 10V, f = 100MHz
VCB=5V, IE=0, f=100KHz
VCC = 30V, VBE = 2V
IC = 150mA, IB1 = 15mA
VCC = 30V, IC = 150mA
IB1 = IB2 = 15mA
Min.
60
40
6
20
40
80
100
40
0.75
250
Units
V
V
V
mA
mW
°C
Max.
100
100
Units
V
V
V
nA
nA
300
0.4
0.75
0.95
1.2
6.5
35
255
V
V
V
V
MHz
pF
ns
ns
©2005 Fairchild Semiconductor Corporation
1
MMBT4401K Rev. A
www.fairchildsemi.com



MMBT4401K
Typical Performance Characteristics
Figure 1. DC current Gain
1000
VCE = 1V
100
10
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 3. Collector-Base Capacitance
IE = 0
10
f = 100KHz
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
IC = 10 IB
1
VBE(sat)
0.1
VCE(sat)
0.01
1
10
100
1000
IC[mA], COLLECTOR CURRENT
Figure 4. Current Gain Bandwidth Product
10000
1000
VCE = 10V
100
1
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
10
1
10
100
IC[mA], COLLECTOR CURRENT
2
www.fairchildsemi.com
MMBT4401K Rev. A







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