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IXTP2N100P
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IXTP2N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 7.5Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE ...
INCHANGE
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