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IXTP4N65X2
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IXTP4N65X2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATING...
INCHANGE
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