Thyristor. MCMA140P1800TA Datasheet

MCMA140P1800TA Thyristor. Datasheet pdf. Equivalent


Part MCMA140P1800TA
Description Thyristor
Feature Thyristor Module Phase leg Part number MCMA140P1800TA MCMA140P1800TA VRRM I TAV VT = 2x 1800 V = .
Manufacture IXYS
Datasheet
Download MCMA140P1800TA Datasheet


FEATURES ·The chip is electrically insulated from the base p MCMA140P1800TA Datasheet
Thyristor Module Phase leg Part number MCMA140P1800TA MCMA1 MCMA140P1800TA Datasheet
Recommendation Recommendation Datasheet MCMA140P1800TA Datasheet




MCMA140P1800TA
Thyristor Module
Phase leg
Part number
MCMA140P1800TA
MCMA140P1800TA
VRRM
I TAV
VT
= 2x 1800 V
= 140 A
= 1.28 V
3
67 1
542
Backside: isolated
Features / Advantages:
Thyristor for line frequency
Planar passivated chip
Long-term stability
Direct Copper Bonded Al2O3-ceramic
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-240AA
Isolation Voltage: 4800 V~
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: DCB ceramic
Reduced weight
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d



MCMA140P1800TA
MCMA140P1800TA
Thyristor
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I T(RMS)
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1800 V
VR/D = 1800 V
forward voltage drop
IT = 150 A
I T = 300 A
IT = 150 A
I T = 300 A
average forward current
TC = 85°C
RMS forward current
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 140°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 140°C
TVJ = 140°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 140°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 140°C
VR = 0 V
TVJ = 25°C
TC = 140°C
TVJ = 140 °C; f = 50 Hz
repetitive, IT = 450 A
tP = 200 µs; diG /dt =0.45 A/µs;
IG = 0.45 A; V = VDRM
non-repet., IT = 150 A
V = VDRM
TVJ = 140°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 140°C
latching current
holding current
gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VR = 100 V; IT = 150A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1900 V
1800 V
100 µA
10 mA
1.29 V
1.63 V
1.28 V
1.70 V
140 A
220 A
0.85 V
2.8 m
0.22 K/W
0.2
K/W
520 W
2.40 kA
2.59 kA
2.04 kA
2.21 kA
28.8 kA²s
27.9 kA²s
20.8 kA²s
20.2 kA²s
119
pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
1000 V/µs
1.5 V
1.6 V
150 mA
200 mA
0.2 V
10 mA
200 mA
200 mA
2 µs
185
µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2019 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20191111d







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