Schottky Diode. MBR20150CD Datasheet

MBR20150CD Diode. Datasheet pdf. Equivalent


Part MBR20150CD
Description Schottky Diode
Feature Pin 2 Pin 3 MBR20100CD THRU MBR20200CD RoHS COMPLIANT Pin 1 Schottky Diodes Features ● High freq.
Manufacture Yangzhou Yangjie
Datasheet
Download MBR20150CD Datasheet


Schottky Barrier Rectifier MBR20150CD FEATURES ·Multilayer MBR20150CD Datasheet
Pin 2 Pin 3 MBR20100CD THRU MBR20200CD RoHS COMPLIANT Pin MBR20150CD Datasheet
Recommendation Recommendation Datasheet MBR20150CD Datasheet




MBR20150CD
Pin 2
Pin 3
MBR20100CD THRU MBR20200CD
RoHS
COMPLIANT
Pin 1
Schottky Diodes
Features
High frequency operation
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
Package: TO-252
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
Polarity: As marked
Maximum Ratings (Ta=25Unless otherwise specified
PARAMETER
SYMBOL UNIT
MBR20100CD
Device marking code
MBR20100CD
Repetitive Peak Reverse Voltage
VRRM
V
100
Average Rectified Output Current @60Hz sine
wave, R-load, Ta=25
IO
A
Surge(Non-repetitive)Forward Current @60Hz
half sine-wave, 1 cycle, Ta=25
IFSM
A
Current Squared Time @1mst<8.3ms
Tj=25℃,
I2t
A2s
Storage Temperature
Tstg
Junction Temperature
Tj
MBR20150CD
MBR20150CD
150
20
130
70
-55 ~ +175
-55 ~ +175
Electrical CharacteristicsTa=25Unless otherwise specified
PARAMETER
SYMBOL UNIT
TEST
CONDITIONS
MBR20100CD
Maximum instantaneous forward
voltage drop per diode
VFM
V IFM=10.0A
0.83
Maximum DC reverse current
at rated DC blocking voltage per
diode
IRRM1
IRRM2
VRM=VRRM
Ta=25
mA
VRM=VRRM
Ta=125
MBR20150CD
0.87
0.1
20
MBR20200CD
MBR20200CD
200
MBR20200CD
0.9
S-B971
Rev.1.1,3-Aug-18
1/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com



MBR20150CD
MBR20100CD THRU MBR20200CD
Thermal Characteristics Ta=25Unless otherwise specified
PARAMETER
SYMBOL
UNIT
MBR20100CD
MBR20150CD
MBR20200CD
Thermal
Resistance
Between
junction
and case
RθJ-C
/W
5.0
Ordering Information (Example)
PREFERED P/N
UNIT WEIGHT(g)
MBR20100CD THRU MBR20200CD Approximate 0.32
MINIIMUM
PACKAGE(pcs)
2500
INNER BOX
QUANTITY(pcs)
2500
OUTER CARTON
QUANTITY(pcs)
25000
DELIVERY MODE
Reel
Characteristics (Typical)
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0
0
FIG1:Io -Tc Curve
TC measure point
IN DC
50
100
150
200
Case Temperature(℃)
FIG2:Surge Forward Current Capability
140
120
100
8.3ms Single
Half Sine-Wave
80
JEDEC Method
60
40
20
1
2
5
10 20
Number of Cycles
50
100
FIG3: Forward Voltage
100
60
20
100V
10
5.0
200V
1.0
150V
0.5
0.2
0.1 0
Ta=25
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
100
10
1.0
0.1
0.01
0.001
0
FIG.4: Instantaneous Reverse Characteristics
Tj=125
Tj=25
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
S-B971
Rev.1.1,3-Aug-18
2/4
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com







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