Efficiency Thyristor. CLA60MT1200NHB Datasheet

CLA60MT1200NHB Thyristor. Datasheet pdf. Equivalent


Part CLA60MT1200NHB
Description High Efficiency Thyristor
Feature High Efficiency Thyristor Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NHB .
Manufacture IXYS
Datasheet
Download CLA60MT1200NHB Datasheet


isc Triacs CLA60MT1200NHB FEATURES ·With TO-247S package · CLA60MT1200NHB Datasheet
High Efficiency Thyristor Three Quadrants operation: QI - QI CLA60MT1200NHB Datasheet
Recommendation Recommendation Datasheet CLA60MT1200NHB Datasheet




CLA60MT1200NHB
High Efficiency Thyristor
Three Quadrants operation: QI - QIII
1~ Triac
Part number
CLA60MT1200NHB
CLA60MT1200NHB
VRRM = 1200 V
I TAV
=
30 A
VT = 1.25 V
Three Quadrants Operation
Positive Half Cycle
T2
+
T2
(-) IGT
IGT -
(+) IGT
T1
REF QII QI
T2 QIII QIV
T1
REF
+ IGT
(-) IGT
T1
REF
-
Negative Half Cycle
Note: All Polarities are referenced to T1
Features / Advantages:
Triac for line frequency
Three Quadrants Operation
- QI - QIII
Planar passivated chip
Long-term stability
of blocking currents and voltages
2
3
1
Backside: Terminal 2
Applications:
Line rectifying 50/60 Hz
Softstart AC motor control
DC Motor control
Power converter
AC power control
Lighting and temperature control
Package: TO-247
Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200121e



CLA60MT1200NHB
CLA60MT1200NHB
Rectifier
Ratings
Symbol
VRSM/DSM
VRRM/DRM
I R/D
VT
I TAV
I RMS
VT0
rT
R thJC
RthCH
Ptot
I TSM
I²t
CJ
PGM
PGAV
(di/dt)cr
(dv/dt)cr
VGT
IGT
VGD
IGD
IL
IH
t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 1200 V
VR/D = 1200 V
forward voltage drop
IT = 30 A
I T = 60 A
IT = 30 A
I T = 60 A
average forward current
TC = 120°C
RMS forward current per phase
180° sine
threshold voltage
slope resistance
for power loss calculation only
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 150°C
TVJ = 150°C
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
value for fusing
junction capacitance
max. gate power dissipation
average gate power dissipation
critical rate of rise of current
critical rate of rise of voltage
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
turn-off time
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V
tP = 30 µs
tP = 300 µs
f = 1 MHz
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
TC = 150°C
TVJ = 150 °C; f = 50 Hz
repetitive, IT = 90 A
tP = 200 µs; diG /dt = 0.3 A/µs;
IG = 0.3 A; V = VDRM
non-repet., IT = 30 A
V = VDRM
TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 150°C
t p = 10 µs
TVJ = 25 °C
IG = 0.3 A; diG/dt = 0.3 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.3 A; diG/dt = 0.3 A/µs
VR = 100 V; IT = 30A; V = VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit
1300 V
1200 V
10 µA
2 mA
1.28 V
1.56 V
1.25 V
1.61 V
30 A
66 A
0.86 V
12.5 m
0.55 K/W
0.3
K/W
230 W
380 A
410 A
325 A
350 A
720 A²s
700 A²s
530 A²s
510 A²s
25
pF
10 W
5W
0.5 W
150 A/µs
500 A/µs
500 V/µs
1.7 V
1.9 V
± 60 mA
± 80 mA
0.2 V
± 1 mA
90 mA
60 mA
2 µs
150
µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200121e







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