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IXTP64N10L2
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IXTP64N10L2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 32mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current
Regulator
s ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATI...
INCHANGE
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