Power MOSFET. IXTT26N50P Datasheet

IXTT26N50P MOSFET. Datasheet pdf. Equivalent


Part IXTT26N50P
Description Power MOSFET
Feature PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 26N50P IXTT 26N50P IXTV 26N5.
Manufacture IXYS
Datasheet
Download IXTT26N50P Datasheet


PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche IXTT26N50P Datasheet
Recommendation Recommendation Datasheet IXTT26N50P Datasheet




IXTT26N50P
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTQ 26N50P
IXTT 26N50P
IXTV 26N50P
IXTV 26N50PS
VDSS =
ID25 =
RDS(on)
500 V
26 A
230 m
TO-3P (IXTQ)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
TSOLD
Md
Weight
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 M
Continuos
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150° C, RG = 4
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P
TO-268
PLUS220 & PLUS220SMD
500
V
G
D
500
V
S
±30
V TO-268 (IXTT)
±40
V
D (TAB)
26
A
78
A
G
S
26
A
40
mJ PLUS220 (IXTV)
1.0
J
D (TAB)
10
V/ns
400
W
G
D
S
D (TAB)
-55 ... +150
150
-55 ... +150
°C PLUS220SMD (IXTV_S)
°C
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
6
g
5.5
g
5
g
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500
V
VGS(th)
VDS = VGS, ID = 250µA
3.0
5.5 V
IGSS
VGS = ±30 VDC, VDS = 0
±100 nA
I
DSS
V =V
DS
DSS
VGS = 0 V
TJ = 125° C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
230 m
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99206E(12/05)



IXTT26N50P
Symbol
gfs
Ciss
Coss
Crss
t
d(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCS
IXTQ 26N50P IXTT 26N50P
IXTV 26N50P IXTV26N50PS
Test Conditions
Characteristic Values
(T
J
=
25°
C,
unless
otherwise
specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
VGS = 10 V, VDS = 0.5 ID25
RG = 4 (External)
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
24 31
S
3600
pF
380
pF
48
pF
20
ns
25
ns
58
ns
20
ns
65
nC
18
nC
20
nC
0.31 ° C/W
0.21
° C/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
IS
VGS = 0 V
I
Repetitive
SM
VSD
IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d2 %
26 A
104 A
1.5 V
trr
IF = 25A, -di/dt = 100 A/µs
Q
V = 100V, V = 0 V
RM
R
GS
300
ns
3.3
µC
PLUS220 (IXTV) Outline
PLUS220SMD (IXTV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585
6,710,405B2 6,759,692
6,710,463
6,771,478 B2







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