N-Channel MOSFET. IXTX110N20L2 Datasheet

IXTX110N20L2 MOSFET. Datasheet pdf. Equivalent


Part IXTX110N20L2
Description N-Channel MOSFET
Feature Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTX110N20L2 ·FEATURES ·With TO-3PL package.
Manufacture INCHANGE
Datasheet
Download IXTX110N20L2 Datasheet


Advance Technical Information LinearL2TM Power MOSFET w/Ext IXTX110N20L2 Datasheet
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTX IXTX110N20L2 Datasheet
Recommendation Recommendation Datasheet IXTX110N20L2 Datasheet




IXTX110N20L2
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTX110N20L2
·FEATURES
·With TO-3PL package
·Low input capacitance and gate charge
·High speed switching
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·Load switch
·Power management
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
200
V
VGSS Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
110
A
IDM
Drain Current-Single Pulsed
275
A
PD
Total Dissipation @TC=25
960
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a)
Channel-to-ambient
resistance
thermal
MAX
0.13
62.5
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IXTX110N20L2
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IXTX110N20L2
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 1mA
200
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=3mA
2.0
4.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=55A
24
mΩ
IGSS
IDSS
VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=200V; VGS= 0V;Tc=25
Tc=125
Diode forward voltage
ISD=55A, VGS = 0V
±0.2 μA
50
2500
μA
1.35
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)