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IXTY05N100

INCHANGE
Part Number IXTY05N100
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 23, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully ...
Datasheet PDF File IXTY05N100 PDF File

IXTY05N100
IXTY05N100

Overview
isc N-Channel MOSFET Transistor IXTY05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 0.
75 A IDM Drain Current-Single Pulsed 3 A PD Total Dissipation @TC=25℃ 40 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temp...


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