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STP18N55M5

INCHANGE
Part Number STP18N55M5
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 8, 2020
Detailed Description isc N-Channel MOSFET Transistor STP18N55M5 FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V...
Datasheet PDF File STP18N55M5 PDF File

STP18N55M5
STP18N55M5

Overview
isc N-Channel MOSFET Transistor STP18N55M5 FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS= 550V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 240mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 550 V ±25 V 13 A 52 A 90 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS...


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