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AOTF262L

Part Number	AOTF262L
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 11, 2020
Detailed Description	isc N-Channel MOSFET Transistor AOTF262L ·FEATURES ·Drain Current –ID= 85A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(...
Datasheet	AOTF262L PDF File

Overview

isc N-Channel MOSFET Transistor AOTF262L ·FEATURES ·Drain Current –ID= 85A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.
6mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Be suitable for synchronous rectification for server and general purpose applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 85 A IDM Drain Current-Single Pulsed 340 A PD Total Dissipation @TC=25℃ 50 W Tj Max.
Operating Junction Temperature -55~175 ℃ Tstg ...

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