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AOW12N60

INCHANGE
Part Number AOW12N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 11, 2020
Detailed Description isc N-Channel MOSFET Transistor AOW12N60 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Mi...
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AOW12N60
AOW12N60

Overview
isc N-Channel MOSFET Transistor AOW12N60 FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
55Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 278 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tst...


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