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FQD50P06

INCHANGE
Part Number FQD50P06
Manufacturer INCHANGE
Description P-Channel MOSFET
Published Dec 12, 2020
Detailed Description isc P-Channel MOSFET Transistor FQD50P06 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V...
Datasheet PDF File FQD50P06 PDF File

FQD50P06
FQD50P06

Overview
isc P-Channel MOSFET Transistor FQD50P06 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max)@VGS= -10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for high current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pluse -80 A PD Total Dissipation @TC=25℃ 113 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temper...


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