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IRFP31N50L
N-Channel MOSFET
Description
iscN-Channel MOSFET
Transistor
IRFP31N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.18Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage
Regulator
s ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO...
INCHANGE
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