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RJP30E2

Renesas
Part Number RJP30E2
Manufacturer Renesas
Description N-Channel Power MOSFET
Published Dec 19, 2020
Detailed Description RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low col...
Datasheet PDF File RJP30E2 PDF File

RJP30E2
RJP30E2

Overview
RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.
7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) Preliminary Datasheet R07DS0347EJ0200 Rev.
2.
00 Apr 12, 2011 C 1 23 1.
Gate 2.
Collector G 3.
Emitter E Absolute Maximum Ratings Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1.
PW ≤ 10 ...


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