Trench MOSFET. 12M1H060 Datasheet

12M1H060 MOSFET. Datasheet pdf. Equivalent


Infineon 12M1H060
IMZ120R060M1H
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Silicon Carbide MOSFET
Features
Very low switching losses
Threshold-free on state characteristic
Benchmark gate threshold voltage, VGS(th) = 4.5V
0V turn-off gate voltage for easy and simple gate drive
Fully controllable dV/dt
Robust body diode for hard commutation
Temperature independent turn-off switching losses
Sense pin for optimized switching performance
Gate
pin 4
Sense
pin 3
Drain
pin 1
Source
pin 2
Benefits
Efficiency improvement
Enabling higher frequency
Increased power density
Cooling effort reduction
Reduction of system complexity and cost
Potential applications
Energy generation
o Solar string inverter and solar optimizer
Industrial power supplies
o Industrial UPS
o Industrial SMPS
Infrastructure Charge
o Charger
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22
Note:
the source and sense pins are not exchangeable, their exchange might lead to malfunction
Table 1
Key Performance and Package Parameters
Type
VDS
IMZ120R060M1H 1200V
ID
TC = 25°C, Rth(j-c,max)
36A
RDS(on)
Tvj = 25°C, ID = 13A, VGS = 18V
60
Tvj,max
175°C
Marking
12M1H060
Package
PG-TO247-4
Datasheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com
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12M1H060 Datasheet
Recommendation 12M1H060 Datasheet
Part 12M1H060
Description 1200V SiC Trench MOSFET
Feature 12M1H060; IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Ver.
Manufacture Infineon
Datasheet
Download 12M1H060 Datasheet




Infineon 12M1H060
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Table of contents
T12a0b0lVe SoifCcTornentechnMtsOSFET
Features ........................................................................................................................................ 1
Benefits ......................................................................................................................................... 1
Potential applications ..................................................................................................................... 1
Product validation .......................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1 Maximum ratings ................................................................................................................... 3
2 Thermal resistances ............................................................................................................... 4
3 Electrical Characteristics ........................................................................................................ 5
3.1
Static characteristics...............................................................................................................................5
3.2
Dynamic characteristics..........................................................................................................................6
3.3
Switching characteristics ........................................................................................................................ 7
4 Electrical characteristic diagrams ............................................................................................ 8
5 Package drawing...................................................................................................................14
6 Test conditions .....................................................................................................................15
Revision history.............................................................................................................................16
Datasheet
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Infineon 12M1H060
IMZ120R060M1H
CoolSiC™ 1200V SiC Trench MOSFET
Maximum ratings
1
Maximum ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the
maximum ratings stated in this datasheet.
Table 2
Maximum ratings
Parameter
Drain-source voltage, Tvj ≥ 25°C
DC drain current for R , th(j-c,max) limited by Tvjmax, VGS = 18V,
TC = 25°C
TC = 100°C
Pulsed drain current, tp limited by Tvjmax, VGS = 18V
DC body diode forward current for R , th(j-c,max)
limited by Tvjmax, VGS = 0V
TC = 25°C
TC = 100°C
Pulsed body diode current, tp limited by Tvjmax
Gate-source voltage2
Max transient voltage, < 1% duty cycle
Recommended turn-on gate voltage
Recommended turn-off gate voltage
Short-circuit withstand time
VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C
Power dissipation, limited by Tvjmax
TC = 25°C
TC = 100°C
Virtual junction temperature
Storage temperature
Soldering temperature,
wave soldering only allowed at leads,
1.6mm (0.063 in.) from case for 10 s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
VDSS
ID
I1
D,pulse
ISD
I1
SD,pulse
VGS
VGS,on
VGS,off
tSC
Ptot
Tvj
Tstg
Tsold
M
Value
1200
36
26
76
36
22
76
-723
15… 18
0
3
150
75
-55… 175
-55… 150
260
0.6
Unit
V
A
A
A
A
V
µs
W
°C
°C
°C
Nm
1 verified by design
2 Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior
of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure
sound operation of the device over the planned lifetime.
Datasheet
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