isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0281G ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high fidelity audio amplifier and
other linear applications
ABSOLUTE MAXIMUM RATINGS...
