FQA140N10 | INCHANGE
N-Channel MOSFET
isc N-Channel MOSFET Transistor
FQA140N10
FEATURES ·Drain Current –I.
N-Channel MOSFET
isc N-Channel MOSFET Transistor
FQA140N10
FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in audio amplifier,
high efficiency switching DC/DC converters, and DC motor con.
- FQA140N10 | INCHANGE
- N-Channel MOSFET
- isc N-Channel MOSFET Transistor
FQA140N10
FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source .
- isc N-Channel MOSFET Transistor
FQA140N10
FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in audio amplifier,
high efficiency switching DC/DC converters, and DC motor control.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
P.
- FQA140N10 | Fairchild Semiconductor
- 100V N-Channel MOSFET
- FQA140N10
September 2000
QFET
FQA140N10
100V N-Channel MOSFET
General Description
These N-Channel .
- FQA140N10
September 2000
QFET
FQA140N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suite.
