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FQA140N10
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
FQA140N10 FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.1Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in audio amplifier, high efficiency swit...
INCHANGE
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