HM3307B
70VDS／±25VGS／114A(ID) N-Channel Enha ncement Mode MOSFET
Features
VDSS=70V／VGSS=±25V／ID=114A
RDS(ON)=8mΩ(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology
Pin Description
Applications
Synchronous Rectification Power Management in Inverter System
Switching Time Test Circuit and Waveforms
HM330...
