N-Channel MOSFET. AOY2610E Datasheet

AOY2610E MOSFET. Datasheet pdf. Equivalent


Alpha & Omega Semiconductors AOY2610E
AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology
• Low RDS(ON)
• Low Gate Charge
• Low Eoss
• ESD protected
• RoHS and Halogen-Free Compliant
Applications
• High efficiency power supply
• Secondary synchronus rectifier
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS=4.5V)
Typical ESD protection
100% UIS Tested
100% Rg Tested
60V
46A
< 9.5mΩ
< 13.3mΩ
HBM Class 2
TO-252
TO-251A
TO251B
DPAK
IPAK
D
Top View
Bottom View
Top View
Bottom View
Top View
Bottom View
D
D
S
G
G
S
AOD2610E
Orderable Part Number
AOD2610E
AOI2610E
AOY2610E
D
S
D
G
G
D
S
AOI2610E
Package Type
TO-252
TO-251A
TO-251B
S
GD
AOY2610E
Form
Tape & Reel
Tube
Tube
D
G
G
SD
S
Minimum Order Quantity
2500
4000
4000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
VDS Spike I
10µs
TC=25°C
Power Dissipation B TC=100°C
VGS
ID
IDM
IDSM
IAS
EAS
VSPIKE
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
60
±20
46
36.5
110
19
15
17
43
72
59.5
23.5
6.2
4.0
-55 to 150
Units
V
V
A
A
A
mJ
V
W
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A t ≤ 10s
Maximum Junction-to-Ambient A D Steady-State
RθJA
15
40
Maximum Junction-to-Case
Steady-State
RθJC
1.7
Max
20
50
2.1
Units
°C/W
°C/W
°C/W
Rev.2.0: November 2016
www.aosmd.com
Page 1 of 6


AOY2610E Datasheet
Recommendation AOY2610E Datasheet
Part AOY2610E
Description 60V N-Channel MOSFET
Feature AOY2610E; AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM .
Manufacture Alpha & Omega Semiconductors
Datasheet
Download AOY2610E Datasheet




Alpha & Omega Semiconductors AOY2610E
AOD2610E/AOI2619E/AOY2610E
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
60
IDSS
Zero Gate Voltage Drain Current
VDS=60V, VGS=0V
TJ=55°C
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th) Gate Threshold Voltage
VDS=VGS, ID=250µA
1.4
VGS=10V, ID=20A
RDS(ON) Static Drain-Source On-Resistance
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A, VGS=0V
IS
Maximum Body-Diode Continuous Current G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz
f=1MHz
0.6
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=20A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=1.5,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs
Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs
Typ
1.8
7.7
12.5
10.3
52
0.72
1100
300
28
1.2
14.5
7
2.5
3.5
6.5
3.5
22
3
19
65
Max Units
V
1
µA
5
±10 µA
2.4
V
9.5
mΩ
15.5
13.3 mΩ
S
1
V
46
A
pF
pF
pF
2.0
25
nC
13
nC
nC
nC
ns
ns
ns
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: November 2016
www.aosmd.com
Page 2 of 6



Alpha & Omega Semiconductors AOY2610E
AOD2610E/AOI2619E/AOY2610E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
4.5V
80
6V
4V
100
VDS=5V
80
60
3.5V
40
3.0V
20
VGS=2.5V
0
0
1
2
3
4
5
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
12
VGS=4.5V
10
8
VGS=10V
6
60
40
125°C
20
25°C
0
1
2
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
2
1.8
VGS=10V
1.6
ID=20A
1.4
1.2
VGS=4.5V
ID=20A
1
4
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
35
ID=20A
30
25
20
125°C
15
10
5
25°C
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.8
0
25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
Rev.2.0: November 2016
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Page 3 of 6







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