Bus Buffer. TC7SET126F Datasheet

TC7SET126F Buffer. Datasheet pdf. Equivalent


Toshiba TC7SET126F
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SET126F
TC7SET126F
1. Functional Description
• Bus Buffer
2. Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperature range: Topr = -40 to 125 (Note 2)
(3) High speed operation: tpd = 3.7 ns (typ.) (VCC = 5.0 V, CL = 15 pF)
(4) Low power dissipation: ICC = 2.0 µA (max) (Ta = 25 )
(5) Compatible with TTL outputs: VIL = 0.8 V (max)
VIH = 2.0 V (min)
(6) 5.5 V tolerant inputs
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SMV
©2015-2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2004-06
2017-12-21
Rev.3.0


TC7SET126F Datasheet
Recommendation TC7SET126F Datasheet
Part TC7SET126F
Description Bus Buffer
Feature TC7SET126F; CMOS Digital Integrated Circuits Silicon Monolithic TC7SET126F TC7SET126F 1. Functional Descriptio.
Manufacture Toshiba
Datasheet
Download TC7SET126F Datasheet




Toshiba TC7SET126F
4. Marking and Pin Assignment
TC7SET126F
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
G
A
Y
L
X
Z
H
L
L
H
H
H
X: Don't care
Z: High impedance
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 7.0
V
Input voltage
VIN
-0.5 to 7.0
DC output voltage
VOUT
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 1)
±20
DC output current
IOUT
±25
VCC/ground current
ICC
±50
Power dissipation
PD
200
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VOUT < GND, VOUT > VCC
©2015-2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-21
Rev.3.0



Toshiba TC7SET126F
8. Operating Ranges (Note)
TC7SET126F
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
Input voltage
Output voltage
Operating temperature
VCC
4.5 to 5.5
V
VIN
0 to 5.5
VOUT
0 to VCC
Topr
(Note 1)
-40 to 125
(Note 2)
-40 to 85
Input rise and fall time
dt/dv
0 to 20
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: For devices with the ordering part number ending in J(CT.
Note 2: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
Test Condition
VIH
VIL
VOH
VOL
IOZ
IIN
ICC
ICCT
VIN = VIH
VIN = VIH or VIL
VIN = VIH or VIL
VOUT = VCC or GND
VIN = 5.5 V or GND
VIN = VCC or GND
Per input: VIN = 3.4 V
Other input: VCC or GND
IOH = -50 µA
IOH = -8 mA
IOL = 50 µA
IOL = 8 mA
VCC (V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
Min
2.0
4.4
3.94
Typ. Max Unit
V
0.8
V
4.5
V
0.0
0.1
V
0.36
±0.25 µA
±0.1
µA
2.0
µA
1.35 mA
9.2. DC Characteristics (Unless otherwise specified, Ta = -40 to 85 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Quiescent supply current
Symbol
Test Condition
VIH
VIL
VOH VIN = VIH
VOL VIN = VIH or VIL
IOZ VIN = VIH or VIL
VOUT = VCC or GND
IIN VIN = 5.5 V or GND
ICC VIN = VCC or GND
ICCT Per input: VIN = 3.4 V
Other input: VCC or GND
IOH = -50 µA
IOH = -8 mA
IOL = 50 µA
IOL = 8 mA
VCC (V)
4.5 to 5.5
4.5 to 5.5
4.5
4.5
4.5
4.5
5.5
0 to 5.5
5.5
5.5
Min
2.0
4.4
3.80
Max
Unit
V
0.8
V
V
0.1
V
0.44
±2.5
µA
±1.0
µA
20.0
µA
1.50
mA
©2015-2017
Toshiba Electronic Devices & Storage Corporation
3
2017-12-21
Rev.3.0







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