NON-Inverter. TC7SZ07AFS Datasheet

TC7SZ07AFS NON-Inverter. Datasheet pdf. Equivalent

TC7SZ07AFS Datasheet
Recommendation TC7SZ07AFS Datasheet
Part TC7SZ07AFS
Description NON-Inverter
Feature TC7SZ07AFS; CMOS Digital Integrated Circuits Silicon Monolithic TC7SZ07AFS TC7SZ07AFS 1. Functional Descriptio.
Manufacture Toshiba
Datasheet
Download TC7SZ07AFS Datasheet




Toshiba TC7SZ07AFS
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SZ07AFS
TC7SZ07AFS
1. Functional Description
• Non-Inverter (Open Drain)
2. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) High output current: ±24 mA (min) at VCC = 3.0 V
(3) Super high speed operation: tPZL = 2.3 ns (typ.) at VCC = 5.0 V, CL = 50 pF
(4) Operation voltage range: VCC = 1.65 to 5.5 V
(5) 5.5 V tolerant inputs
(6) 5.5 V power down protection output
Note 1: For devices with the ordering part number ending in J(T. Topr = -40 to 85 for the other devices.
3. Packaging
fSV
©2016-2019
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2008-03
2019-01-30
Rev.3.0



Toshiba TC7SZ07AFS
4. Marking and Pin Assignment
TC7SZ07AFS
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
A
Y
L
L
H
Z
Z: High impedance
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 6.0
V
Input voltage
VIN
-0.5 to 6.0
V
DC output voltage
VOUT
(Note 1)
-0.5 to 6.0
V
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 2)
-20
mA
DC output current
IOUT
50
mA
VCC/ground current
ICC
±50
mA
Power dissipation
PD
50
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: IOUT absolute maximum rating must be observed.
Note 2: VOUT < GND
©2016-2019
Toshiba Electronic Devices & Storage Corporation
2
2019-01-30
Rev.3.0



Toshiba TC7SZ07AFS
8. Operating Ranges (Note)
TC7SZ07AFS
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Supply voltage
VCC
(Note 1)
1.65 to 5.5
V
1.5 to 5.5
Input voltage
VIN
Output voltage
VOUT
Operating temperature
Topr
(Note 2)
(Note 3)
0 to 5.5
V
0 to 5.5
V
-40 to 125
-40 to 85
Input rise and fall time
dt/dv
VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V
VCC = 3.3 ± 0.3 V
VCC = 5.0 ± 0.5 V
0 to 20
0 to 10
0 to 5
ns/V
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Data retention only
Note 2: For devices with the ordering part number ending in J(T.
Note 3: For devices except those with the ordering part number ending in J(T.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
High-level input voltage
Low-level input voltage
Low-level output voltage
3-state output OFF-state
leakage current
Input leakage current
Power-OFF leakage
current
Quiescent supply current
Symbol
VIH
Test Condition
VIL
VOL VIN = VIL
IOL = 100 µA
IOL = 4 mA
IOL = 8 mA
IOL = 16 mA
IOL = 24 mA
IOL = 32 mA
IOZ VIN = VIH
VOUT = 0 to 5.5 V
IIN VIN = 5.5 V or GND
IOFF VIN or VOUT = 5.5 V
ICC VIN = VCC or GND
VCC (V)
Min
1.65 to 1.95
2.3 to 5.5
1.65 to 1.95
VCC × 0.75
VCC × 0.7
2.3 to 5.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
3.0
4.5
1.65 to 5.5
Typ.
0.0
0.0
0.0
0.0
0.08
0.1
0.15
0.22
0.22
Max Unit
V
VCC × 0.25 V
VCC × 0.3
0.1
V
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±5
µA
0 to 5.5
±1
µA
0
1
µA
5.5
2
µA
©2016-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-01-30
Rev.3.0







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