OR Gate. TC7SZ32FE Datasheet

TC7SZ32FE Gate. Datasheet pdf. Equivalent

TC7SZ32FE Datasheet
Recommendation TC7SZ32FE Datasheet
Part TC7SZ32FE
Description 2-Input OR Gate
Feature TC7SZ32FE; CMOS Digital Integrated Circuits Silicon Monolithic TC7SZ32FE TC7SZ32FE 1. Functional Description .
Manufacture Toshiba
Datasheet
Download TC7SZ32FE Datasheet




Toshiba TC7SZ32FE
CMOS Digital Integrated Circuits Silicon Monolithic
TC7SZ32FE
TC7SZ32FE
1. Functional Description
• 2-Input OR Gate
2. Features
(1) AEC-Q100 (Rev. H) (Note 1)
(2) Wide operating temperature range: Topr = -40 to 125 (Note 2)
(3) High output current: ±24 mA (min) at VCC = 3.0 V
(4) Super high speed operation: tpd = 2.4 ns (typ.) at VCC = 5.0 V, CL = 50 pF
(5) Operation voltage range: VCC = 1.65 to 5.5 V
(6) 5.5 V tolerant inputs
(7) 5.5 V power down protection output
(8) Matches the performance of TC74LCX series when operated at 3.3 V VCC
Note 1: This device is compliant with the reliability requirements of AEC-Q100. For details, contact your Toshiba sales
representative.
Note 2: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
ESV
©2017
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2009-01
2017-12-21
Rev.2.0



Toshiba TC7SZ32FE
4. Marking and Pin Assignment
TC7SZ32FE
Marking
5. IEC Logic Symbol
Pin Assignment (Top view)
6. Truth Table
A
B
Y
L
L
L
L
H
H
H
L
H
H
H
H
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 6.0
V
Input voltage
VIN
-0.5 to 6.0
V
DC output voltage
VOUT
(Note 1)
-0.5 to 6.0
V
(Note 2)
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 3)
-20
mA
DC output current
IOUT
±50
mA
VCC/ground current
ICC
±50
mA
Power dissipation
PD
150
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-12-21
Rev.2.0



Toshiba TC7SZ32FE
8. Operating Ranges (Note)
TC7SZ32FE
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Supply voltage
VCC
(Note 1)
1.65 to 5.5
V
1.5 to 5.5
Input voltage
VIN
0 to 5.5
V
Output voltage
VOUT
(Note 2)
(Note 3)
0 to 5.5
V
0 to VCC
Operating temperature
Topr
(Note 4)
-40 to 125
(Note 5)
-40 to 85
Input rise and fall time
dt/dv
VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V
0 to 20
ns/V
VCC = 3.3 ± 0.3 V
0 to 10
VCC = 5.0 ± 0.5 V
0 to 5
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Data retention only
Note 2: VCC = 0 V
Note 3: High (H) or Low (L) state.
Note 4: For devices with the ordering part number ending in J(CT.
Note 5: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
High-level input voltage
Low-level input voltage
High-level output voltage
Low-level output voltage
Input leakage current
Power-OFF leakage
current
Quiescent supply current
Symbol
Test Condition
VCC (V)
Min
VIH
VIL
1.65 to 1.95 VCC × 0.75
2.3 to 5.5 VCC × 0.7
1.65 to 1.95
2.3 to 5.5
VOH VIN = VIH or VIL
IOH = -100 µA
1.65
2.3
1.55
2.2
3.0
2.9
4.5
4.4
VOL VIN = VIL
IOH = -4 mA
IOH = -8 mA
IOH = -16 mA
IOH = -24 mA
IOH = -32 mA
IOL = 100 µA
1.65
2.3
3.0
3.0
4.5
1.65
2.3
1.29
1.9
2.4
2.3
3.8
3.0
4.5
IOL = 4 mA
1.65
IOL = 8 mA
2.3
IOL = 16 mA
3.0
IOL = 24 mA
3.0
IOL = 32 mA
4.5
IIN VIN = 5.5 V or GND
0 to 5.5
IOFF VIN or VOUT = 5.5 V
0
Typ.
1.65
2.3
3.0
4.5
1.52
2.15
2.8
2.68
4.2
0.0
0.0
0.0
0.0
0.08
0.1
0.15
0.22
0.22
Max Unit
V
VCC × 0.25 V
VCC × 0.3
V
0.1
V
0.1
0.1
0.1
0.24
0.3
0.4
0.55
0.55
±1
µA
1
µA
ICC VIN = VCC or GND
1.65 to 5.5
2
µA
©2017
Toshiba Electronic Devices & Storage Corporation
3
2017-12-21
Rev.2.0







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