Silicon Transistor. BC850BLT1G Datasheet

BC850BLT1G Transistor. Datasheet pdf. Equivalent


ON Semiconductor BC850BLT1G
General Purpose
Transistors
NPN Silicon
BC846ALT1G Series
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: > 4000 V
ESD Rating Machine Model: > 400 V
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector-Emitter Voltage
VCEO
Vdc
BC846
65
BC847, BC850
45
BC848, BC849
30
CollectorBase Voltage
VCBO
Vdc
BC846
80
BC847, BC850
50
BC848, BC849
30
EmitterBase Voltage
VEBO
Vdc
BC846
6.0
BC847, BC850
6.0
BC848, BC849
5.0
Collector Current Continuous
IC
100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation FR5 Board,
PD
(Note 1)
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 1)
RqJA
Total Device Dissipation
PD
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance,
JunctiontoAmbient (Note 2)
RqJA
Junction and Storage
Temperature Range
TJ, Tstg
1. FR5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in 99.5% alumina.
Max
225
1.8
556
300
2.4
417
55 to
+150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
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BASE
COLLECTOR
3
2
EMITTER
3
1
2
SOT23
CASE 318
STYLE 6
MARKING DIAGRAM
XX M G
G
1
XX = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
1
December, 2019 Rev. 18
Publication Order Number:
BC846ALT1/D


BC850BLT1G Datasheet
Recommendation BC850BLT1G Datasheet
Part BC850BLT1G
Description NPN Silicon Transistor
Feature BC850BLT1G; General Purpose Transistors NPN Silicon BC846ALT1G Series Features • Moisture Sensitivity Level: 1.
Manufacture ON Semiconductor
Datasheet
Download BC850BLT1G Datasheet




ON Semiconductor BC850BLT1G
BC846ALT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA)
BC846A, B, C V(BR)CEO
65
V
BC847A, B, C, BC850B, C
45
BC848A, B, C, BC849B, C
30
Collector Emitter Breakdown Voltage
(IC = 10 mA, VEB = 0)
BC846A, B, C V(BR)CES
80
V
BC847A, B, C BC850B, C
50
BC848A, B, C, BC849B, C
30
Collector Base Breakdown Voltage
(IC = 10 mA)
BC846A, B, C V(BR)CBO
80
V
BC847A, B, C, BC850B, C
50
BC848A, B, C, BC849B, C
30
Emitter Base Breakdown Voltage
(IE = 1.0 mA)
BC846A, B, C V(BR)EBO
6.0
V
BC847A, B, C, BC850B, C
6.0
BC848A, B, C, BC849B, C
5.0
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C)
ON CHARACTERISTICS
ICBO
15
nA
5.0
mA
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
hFE
90
BC846B, BC847B, BC848B
150
BC846C, BC847C, BC848C
270
(IC = 2.0 mA, VCE = 5.0 V)
BC846A, BC847A, BC848A
BC846B, BC847B, BC848B,
BC849B, BC850B
BC846C, BC847C, BC848C, BC849C, BC850C
110
180
220
200
290
450
420
520
800
Collector Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA)
Base Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base Emitter Voltage (IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
VCE(sat)
0.25
V
0.6
VBE(sat)
0.7
V
0.9
VBE(on)
580
660
700
mV
770
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT
100
MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz)
Cobo
4.5
pF
Noise Figure (IC = 0.2 mA,
NF
dB
VCE = 5.0 Vdc, RS = 2.0 kW,
BC846A,B,C, BC847A,B,C, BC848A,B,C
10
f = 1.0 kHz, BW = 200 Hz)
BC849B,C, BC850B,C
4.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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ON Semiconductor BC850BLT1G
300
150°C
200
25°C
100 55°C
BC846ALT1G Series
BC846A, BC847A, BC848A, SBC846A
VCE = 1 V
300
150°C
200
25°C
100 55°C
VCE = 5 V
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 1. DC Current Gain vs. Collector
Current
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain vs. Collector
Current
0.18
0.16
IC/IB = 20
150°C
0.14
0.12
25°C
0.10
0.08
0.06
55°C
0.04
0.02
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
1.0
0.9
IC/IB = 20
55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.2
1.1 VCE = 5 V
1.0
0.9
55°C
0.8
25°C
0.7
0.6
150°C
0.5
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Voltage vs. Collector
Current
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