D-Type Flip-Flop. TC7WZ74FU Datasheet

TC7WZ74FU Flip-Flop. Datasheet pdf. Equivalent

TC7WZ74FU Datasheet
Recommendation TC7WZ74FU Datasheet
Part TC7WZ74FU
Description D-Type Flip-Flop
Feature TC7WZ74FU; CMOS Digital Integrated Circuits Silicon Monolithic TC7WZ74FU TC7WZ74FU 1. Functional Description .
Manufacture Toshiba
Datasheet
Download TC7WZ74FU Datasheet




Toshiba TC7WZ74FU
CMOS Digital Integrated Circuits Silicon Monolithic
TC7WZ74FU
TC7WZ74FU
1. Functional Description
• D-Type Flip Flop with Preset and Clear
2. Features
(1) Wide operating temperature range: Topr = -40 to 125 (Note 1)
(2) High output current: ±24 mA (min) (VCC = 3.0 V)
(3) High speed operation: tpd = 2.8 ns (typ.) (VCC = 5.0 V, CL = 50 pF)
(4) Wide operating voltage range: VCC = 1.65 to 5.5 V
(5) 5.5 V tolerant inputs
(6) 5.5 V power down protection output
(7) Matches the performance of TC74LCX series when operated at 3.3 V VCC
Note 1: For devices with the ordering part number ending in J(CT. Topr = -40 to 85 for the other devices.
3. Packaging
SM8
4. Marking and Pin Assignment
Marking
©2017-2020
Toshiba Electronic Devices & Storage Corporation
1
Pin Assignment (Top view)
Start of commercial production
2020-01
2020-02-04
Rev.4.0



Toshiba TC7WZ74FU
5. IEC Logic Symbol
6. Truth Table
TC7WZ74FU
X: Don't care
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Supply voltage
VCC
-0.5 to 6.0
V
Input voltage
VIN
-0.5 to 6.0
V
DC output voltage
VOUT
(Note 1)
-0.5 to 6.0
V
(Note 2)
-0.5 to VCC + 0.5
Input diode current
IIK
-20
mA
Output diode current
IOK
(Note 3)
-20
DC output current
IOUT
±50
VCC/ground current
ICC
±50
mA
Power dissipation
PD
300
mW
Storage temperature
Tstg
-65 to 150
Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: VCC = 0 V
Note 2: High (H) or Low (L) state. IOUT absolute maximum rating must be observed.
Note 3: VOUT < GND
©2017-2020
Toshiba Electronic Devices & Storage Corporation
2
2020-02-04
Rev.4.0



Toshiba TC7WZ74FU
8. Operating Ranges (Note)
TC7WZ74FU
Characteristics
Symbol
Note
Test Condition
Rating
Unit
Supply voltage
VCC
(Note 1)
1.65 to 5.5
V
1.5 to 5.5
Input voltage
VIN
0 to 5.5
V
Output voltage
VOUT
(Note 2)
(Note 3)
0 to 5.5
V
0 to VCC
Operating temperature
Topr
(Note 4)
-40 to 125
(Note 5)
-40 to 85
Input rise and fall time
dt/dv
VCC = 1.8 ± 0.15 V, 2.5 ± 0.2 V
0 to 20
ns/V
VCC = 3.3 ± 0.3 V
0 to 10
VCC = 5.0 ± 0.5 V
0 to 5
Note: The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Note 1: Data retention only
Note 2: VCC = 0 V
Note 3: High (H) or Low (L) state.
Note 4: For devices with the ordering part number ending in J(CT.
Note 5: For devices except those with the ordering part number ending in J(CT.
9. Electrical Characteristics
9.1. DC Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Test Condition
VCC (V)
Min
Typ.
Max
Unit
High-level input voltage VIH
Low-level input voltage
VIL
High-level output voltage VOH VIN = VIL or VIH
1.65 to 1.8 VCC × 0.75
V
2.3 to 5.5 VCC × 0.70
1.65 to 1.8
VCC × 0.25 V
2.3 to 5.5
VCC × 0.30
IOH = -100 µA
1.65
1.55
1.65
V
2.3
2.2
2.3
3.0
2.9
3.0
4.5
4.4
4.5
IOH = -4 mA
1.65
1.29
1.52
IOH = -8 mA
2.3
1.9
2.15
IOH = -16 mA
3.0
2.4
2.8
IOH = -24 mA
3.0
2.3
2.68
IOH = -32 mA
4.5
3.8
4.2
Low-level output voltage VOL VIN = VIL or VIH
IOL = 100 µA
1.65
0.0
0.1
V
2.3
0.0
0.1
3.0
0.0
0.1
4.5
0.0
0.1
IOL = 4 mA
1.65
0.08
0.24
IOL = 8 mA
2.3
0.1
0.3
IOL = 16 mA
3.0
0.15
0.4
IOL = 24 mA
3.0
0.22
0.55
IOL = 32 mA
4.5
0.22
0.55
Input leakage current
IIN VIN = 5.5 V or GND
0 to 5.5
±1
µA
Power-OFF leakage
current
IOFF VIN or GND = 5.5 V
0
1
µA
Quiescent supply
current
ICC VIN = 5.5 V or GND
1.65 to 5.5
1
µA
©2017-2020
Toshiba Electronic Devices & Storage Corporation
3
2020-02-04
Rev.4.0







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)