triple diode. BAT754L Datasheet

BAT754L diode. Datasheet pdf. Equivalent

BAT754L Datasheet
Recommendation BAT754L Datasheet
Part BAT754L
Description Schottky barrier triple diode
Feature BAT754L; BAT754L Schottky barrier triple diode 22 November 2012 Product data sheet 1. Product profile 1.1 .
Manufacture nexperia
Datasheet
Download BAT754L Datasheet




nexperia BAT754L
BAT754L
Schottky barrier triple diode
22 November 2012
Product data sheet
1. Product profile
1.1 General description
Three internal isolated planar Schottky barrier diodes with an integrated guard ring for
stress protection, encapsulated in very small SOT363 Surface-Mounted Device
(SMD) plastic package.
1.2 Features and benefits
Low forward voltage
Low capacitance
AEC-Q101 qualified
1.3 Applications
Ultra high-speed switching
Line termination
Voltage clamping
Reverse polarity protection
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Per diode
VR
reverse voltage
Per diode
VF
forward voltage
IR
reverse current
Conditions
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VR = 25 V; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
-
-
30
V
-
-
750 mV
-
-
2
µA



nexperia BAT754L
Nexperia
BAT754L
Schottky barrier triple diode
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A1
anode (diode 1)
2
A2
anode (diode 2)
3
A3
anode (diode 3)
4
K3
cathode (diode 3)
5
K2
cathode (diode 2)
6
K1
cathode (diode 1)
Simplified outline
654
Graphic symbol
K1 K2 K3
123
TSSOP6 (SOT363)
A1 A2 A3
aaa-005704
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
BAT754L
TSSOP6
Description
plastic surface-mounted package; 6 leads
Version
SOT363
4. Marking
Table 4. Marking codes
Type number
BAT754L
Marking code
[1]
L1%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per diode
VR
reverse voltage
IF
forward current
IFRM
repetitive peak forward current tp < 1 s; δ < 0.5
IFSM
non-repetitive peak forward
tp < 10 ms; Tj(init) = 25 °C
current
Tj
junction temperature
Tamb
ambient temperature
BAT754L
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
Min Max Unit
-
30
V
-
200 mA
-
300 mA
-
600 mA
-
125 °C
-55 125 °C
© Nexperia B.V. 2012. All rights reserved
2/9



nexperia BAT754L
Nexperia
BAT754L
Schottky barrier triple diode
Symbol
Tstg
Parameter
storage temperature
Conditions
Min Max Unit
-65 150 °C
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min Typ Max Unit
[1]
-
-
416 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
7. Characteristics
Table 7. Characteristics
Symbol
Parameter
Per diode
VF
forward voltage
IR
reverse current
Cd
diode capacitance
Conditions
IF = 0.1 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IF = 1 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IF = 10 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IF = 30 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
IF = 100 mA; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VR = 25 V; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
VR = 1 V; f = 1 MHz; Tamb = 25 °C
Min Typ Max Unit
-
-
200 mV
-
-
260 mV
-
-
340 mV
-
-
420 mV
-
-
750 mV
-
-
2
µA
-
-
10
pF
BAT754L
Product data sheet
All information provided in this document is subject to legal disclaimers.
22 November 2012
© Nexperia B.V. 2012. All rights reserved
3/9







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