power transistor. ST13007B Datasheet

ST13007B transistor. Datasheet pdf. Equivalent

ST13007B Datasheet
Recommendation ST13007B Datasheet
Part ST13007B
Description High voltage fast-switching NPN power transistor
Feature ST13007B; ST13007 High voltage fast-switching NPN power transistor Features ■ DC current gain classification .
Manufacture ST Microelectronics
Datasheet
Download ST13007B Datasheet




ST Microelectronics ST13007B
ST13007
High voltage fast-switching NPN power transistor
Features
DC current gain classification
High voltage capability
Low spread of dynamic parameters
Very high switching speed
Applications
Electronic ballast for fluorescent lighting
Switch mode power supplies
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking (1)
Package
Packaging
ST13007
ST13007A
ST13007B
TO-220
Tube
1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics
reserves the right to ship from any group according to production availability.
December 2009
Doc ID 5263 Rev 4
1/11
www.st.com
11



ST Microelectronics ST13007B
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PTOT
TSTG
TJ
Collector-emitter voltage (VBE = 0)
Collector-emitter voltage (IB = 0)
Emitter-base voltage (IC = 0)
Collector current
Collector peak current (tP < 5 ms)
Base current
Base peak current (tP < 5 ms)
Total dissipation at Tc = 25 °C
Storage temperature
Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
RthJC Thermal resistance junction-case
__max
ST13007
Value
Unit
700
V
400
V
9
V
8
A
16
A
4
A
8
A
80
W
- 65 to 150
°C
150
°C
Value
1.56
Unit
°C/W
2/11
Doc ID 5263 Rev 4



ST Microelectronics ST13007B
ST13007
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ICES
Collector cut-off current VCE = 700 V
(VBE = 0)
VCE = 700 V
TC = 125 °C
10 µA
0.5 mA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 9 V
100 µA
Collector-emitter
VCEO(sus) (1) sustaining voltage
(IB = 0)
IC = 10 mA
400
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 2 A
IB = 0.4 A
IC = 5 A _
IB = 1 A
IC = 8 A _ _ IB = 2 A
IC = 5 A, IB = 1 A, TC = 100 °C
1
V
2
V
3
V
3
V
VBE(sat) (1)
Base-emitter saturation
voltage
IC = 2 A
IC = 5 A
_
IB = 0.4 A
IB = 1 A
IC = 5 A, IB = 1 A, TC = 100°C
1.2 V
1.6 V
1.5 V
hFE
DC current gain
IC = 2 A
IC = 5 A
VCE = 5 V 16
VCE = 5 V 5
40
30
Resistive load
ts
Storage time
tf
Fall time
VCC = 300 V
IC = 2 A
IB(on) = - IB(off) = 400 mA
3
TP = 30 µs
4.5 µs
350 ns
Inductive load
ts
Storage time
tf
Fall time
IC = 5 A
IB(on) = 1 A
L = 200 µH
VClamp = 250 V
IB(off) = - 2 A
1.5 2.5 µs
40 110 ns
Inductive load
IC = 5 A
VClamp = 250 V
ts
Storage time
IB(on) = 1 A IB(off) = - 2 A
2
µs
tf
Fall time
L = 200 µH TC = 125 °C
70
ns
1. Pulse test: pulse duration 300 µs, duty cycle 2 %
Table 5. hFE classification
Symbol
Parameter
DC current gain
hFE
IC = 2 A, VCE = 5 V
Group Min. Max. Unit
A
16 30
B
26 40
Doc ID 5263 Rev 4
3/11







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