N-Channel MOSFET. APT12M80S Datasheet

APT12M80S MOSFET. Datasheet pdf. Equivalent


Microsemi APT12M80S
APT12M80B
APT12M80S
800V, 13A, 0.80Ω Max
N-Channel MOSFET
Power MOS 8is a high speed, high voltage N-channel switch-mode power MOSFET.
A proprietary planar stripe design yields excellent reliability and manufacturability. Low
switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-
tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
help control slew rates during switching, resulting in low EMI and reliable paralleling,
even when switching at very high frequency. Reliability in yback, boost, forward, and
other circuits is enhanced by the high avalanche energy capability.
TO-247
D3PAK
APT12M80B
APT12M80S
D
Single die MOSFET G
S
FEATURES
• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant
TYPICAL APPLICATIONS
• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters
Absolute Maximum Ratings
Symbol Parameter
ID
Continuous Drain Current @ TC = 25°C
Continuous Drain Current @ TC = 100°C
IDM
Pulsed Drain Current 1
VGS Gate-Source Voltage
EAS Single Pulse Avalanche Energy 2
IAR
Avalanche Current, Repetitive or Non-Repetitive
Thermal and Mechanical Characteristics
Symbol Characteristic
PD
RθJC
Total Power Dissipation @ TC = 25°C
Junction to Case Thermal Resistance
RθCS Case to Sink Thermal Resistance, Flat, Greased Surface
TJ,TSTG Operating and Storage Junction Temperature Range
TL
Soldering Temperature for 10 Seconds (1.6mm from case)
WT
Package Weight
Torque Mounting Torque ( TO-247 Package), 6-32 or M3 screw
Ratings
Unit
13
8
A
45
±30
V
525
mJ
6
A
Min Typ Max Unit
335
W
0.37
°C/W
0.11
-55
150
°C
300
0.22
oz
6.2
g
10 in·lbf
1.1 N·m
Microsemi Website - http://www.microsemi.com


APT12M80S Datasheet
Recommendation APT12M80S Datasheet
Part APT12M80S
Description N-Channel MOSFET
Feature APT12M80S; APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high volta.
Manufacture Microsemi
Datasheet
Download APT12M80S Datasheet




Microsemi APT12M80S
Static Characteristics
TJ = 25°C unless otherwise specied
Symbol Parameter
Test Conditions
Min
VBR(DSS)
ΔVBR(DSS)/ΔTJ
RDS(on)
VGS(th)
ΔVGS(th)/ΔTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefcient
Drain-Source On Resistance 3
Gate-Source Threshold Voltage
Threshold Voltage Temperature Coefcient
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 250μA
VGS = 10V, ID = 6A
VGS = VDS, ID = 1mA
800
3
IDSS
Zero Gate Voltage Drain Current
VDS = 800V
VGS = 0V
TJ = 25°C
TJ = 125°C
IGSS
Gate-Source Leakage Current
VGS = ±30V
APT12M80B_S
Typ Max Unit
V
0.87
V/°C
0.55 0.80
Ω
4
5
V
-10
mV/°C
100
μA
500
±100 nA
Dynamic Characteristics
Symbol
gfs
Ciss
Crss
Coss
Parameter
Forward Transconductance
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
TJ = 25°C unless otherwise specied
Test Conditions
Min
VDS = 50V, ID = 6A
VGS = 0V, VDS = 25V
f = 1MHz
Co(cr) 4
Co(er) 5
Effective Output Capacitance, Charge Related
Effective Output Capacitance, Energy Related
VGS = 0V, VDS = 0V to 533V
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Current Rise Time
Turn-Off Delay Time
Current Fall Time
VGS = 0 to 10V, ID = 6A,
VDS = 400V
Resistive Switching
VDD = 533V, ID = 6A
RG = 4.7Ω 6 , VGG = 15V
Typ
11
2470
42
245
115
60
80
13
41
14
20
60
18
Max
Unit
S
pF
nC
ns
Source-Drain Diode Characteristics
Symbol Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) 1
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
dv/dt
Peak Recovery dv/dt
Test Conditions
MOSFET symbol
showing the
integral reverse p-n
junction diode
(body diode)
D
G
S
ISD = 6A, TJ = 25°C, VGS = 0V
ISD = 6A, VDD = 100V 3
diSD/dt = 100A/μs, TJ = 25°C
ISD 6A, di/dt 1000A/μs, VDD = 533V,
TJ = 125°C
Min
Typ
840
14
Max Unit
13
A
45
1.0
V
ns
μC
10 V/ns
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Starting at TJ = 25°C, L = 29.17mH, RG = 10Ω, IAS = 6A.
3 Pulse test: Pulse Width < 380μs, duty cycle < 2%.
4 Co(cr) is dened as a xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS.
5 Co(er) is dened as a xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of
VDS less than V(BR)DSS, use this equation: Co(er) = 7.84E-9/VDS^2 + 1.01E-8/VDS + 3.88E-11.
6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specications and information contained herein.



Microsemi APT12M80S
30
VGS = 10V
25
20
TJ = -55°C
TJ = 25°C
15
10
TJ = 125°C
5
TJ = 150°C
0
0
5
10 15 20 25 30
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
3.0
NORMALIZED TO
VGS = 10V @ 6A
2.5
2.0
1.5
1.0
0.5
0
-55 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 3, RDS(ON) vs Junction Temperature
18
16
TJ = -55°C
14
TJ = 25°C
12
TJ = 125°C
10
8
6
4
2
0
0
2
4
6
8
10 12
ID, DRAIN CURRENT (A)
Figure 5, Gain vs Drain Current
16
ID = 6A
14
12
VDS = 160V
10
VDS = 400V
8
6
VDS = 640V
4
2
0
0 20 40 60 80 100 120
Qg, TOTAL GATE CHARGE (nC)
Figure 7, Gate Charge vs Gate-to-Source Voltage
16
TJ = 125°C
14
12
10
APT12M80B_S
VGS= 10, & 15V
VGS= 6, & 6.5V
5.5V
8
6
5V
4
2
4.5V
4V
0
0
5
10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
45
VDS> ID(ON) x RDS(ON) MAX.
40 250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
35
30
25
20
TJ = -55°C
15
10
TJ = 25°C
5
0
0
4,000
TJ = 125°C
1 2 3 4 56 7 8
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 4, Transfer Characteristics
Ciss
1,000
100
Coss
10
Crss
1
0 100 200 300 400 500 600 700 800
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6, Capacitance vs Drain-to-Source Voltage
45
40
35
30
25
TJ = 25°C
20
TJ = 150°C
15
10
5
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 8, Reverse Drain Current vs Source-to-Drain Voltage







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