NPN Amplifier. 2N5551BU Datasheet

2N5551BU Amplifier. Datasheet pdf. Equivalent


ON Semiconductor 2N5551BU
March March 20188
2N5551 / MMBT5551
NPN General-Purpose Amplifier
Description
This device is designed for general-purpose high-voltage
amplifiers and gas discharge display drivers.
2N5551
MMBT5551
3
TO-92
2
1 SOT-23
Marking: 3S
1. Base 2. Emitter 3. Collector
Ordering Information(1)
Part Number
2N5551TA
2N5551TFR
2N5551TF
2N5551BU
MMBT5551
Top Mark
5551
5551
5551
5551
3S
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
Note:
1. Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition: IC = 10 mA, VCE = 5.0 V)
Packing Method
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
© 2009 Semiconductor Components Industries, LLC.,
2N5551 / MMBT5551 Rev. 2
1
www.onsemi.com


2N5551BU Datasheet
Recommendation 2N5551BU Datasheet
Part 2N5551BU
Description NPN Amplifier
Feature 2N5551BU; 2N5551 / MMBT5551 — NPN General-Purpose Amplifier March March 20188 2N5551 / MMBT5551 NPN General-.
Manufacture ON Semiconductor
Datasheet
Download 2N5551BU Datasheet




ON Semiconductor 2N5551BU
Absolute Maximum Ratings(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Units
VCEO Collector-Emitter Voltage
160
V
VCBO Collector-Base Voltage
180
V
VEBO Emitter-Base Voltage
6
V
IC
Collector current - Continuous
600
mA
TJ, Tstg(3) Junction and Storage Temperature
-55 to +150
°C
Notes:
2. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3. These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
PD
RθJC
RθJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Maximum
2N5551
MMBT5551
625
350
5.0
2.8
83.3
200
357
Units
mW
mW/°C
°C/W
°C/W
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size.
© 2009 Semiconductor Components Industries, LLC.
2N5551 / MMBT5551 Rev. 2
2
www.onsemi.com



ON Semiconductor 2N5551BU
Electrical Characteristics(5)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector Cut-Off Current
IEBO Emitter Cut-Off Current
On Characteristics
IC = 1.0 mA, IB = 0
IC = 100 μA, IE = 0
IE = 10 μA, IC = 0
VCB = 120 V, IE = 0
VCB = 120 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter On Voltage
Small-Signal Characteristics
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
fT
Current Gain Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
Cobo
Cibo
Hfe
NF
Note:
Output Capacitance
Input Capacitance
Small-Signal Current Gain
Noise Figure
VCB = 10 V, IE = 0, f = 1.0 MHz
VBE = 0.5 V, IC = 0, f = 1.0 MHz
IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz
IC = 250 μA, VCE= 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
5. Pulse test: pulse width 300 µs, duty cycle 2.0%.
Min.
160
180
6.0
80
80
30
100
50
Max.
50
50
50
250
0.15
0.20
1.0
1.0
6.0
20
250
8.0
Units
V
V
V
nA
μA
nA
V
V
V
V
MHz
pF
pF
dB
© 2009 Semiconductor Components Industries, LLC.
2N5551 / MMBT5551 Rev. 2
3
www.onsemi.com







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