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FKI06190
Power MOSFET
Description
60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features V(BR)DSS --------------------------------- 60 V (ID = 100 µA) ID ---------------------------------------------------------- 30 A RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A) Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A) Package TO-220F Low Total Gate ...
Sanken
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