Power MOSFET. FKI06190 Datasheet

FKI06190 MOSFET. Datasheet pdf. Equivalent

FKI06190 Datasheet
Recommendation FKI06190 Datasheet
Part FKI06190
Description Power MOSFET
Feature FKI06190; 60 V, 30 A, 12.1 mΩ Low RDS(ON) N ch Trench Power MOSFET FKI06190 Features  V(BR)DSS -------------.
Manufacture Sanken
Datasheet
Download FKI06190 Datasheet




Sanken FKI06190
60 V, 30 A, 12.1 mΩ Low RDS(ON)
N ch Trench Power MOSFET
FKI06190
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 30 A
RDS(ON) -------- 16.5 mΩ max. (VGS = 10 V, ID = 19.8 A)
Qg------- 9.1 nC (VGS = 4.5 V, VDS = 30 V, ID = 19.8 A)
Package
TO-220F
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
(1) (2) (3)
s G D S
Design Equivalent circuit
Not to scale
or New Power Supplies
D(2)
G(1)
S(3)
ded f Absolute Maximum Ratings
n Unless otherwise specified, TA = 25 °C
e Parameter
Symbol
m Drain to Source Voltage
VDS
m Gate to Source Voltage
VGS
o Continuous Drain Current
ID
ec Pulsed Drain Current
IDM
R Continuous Source Current
(Body Diode)
IS
t Pulsed Source Current
No (Body Diode)
ISM
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 30 V, L = 1 mH,
Rating
60
± 20
30
59
30
59
Unit
V
V
A
A
A
A
Single Pulse Avalanche Energy
EAS
IAS = 6.8 A, unclamped,
RG = 4.7 Ω
47
mJ
Refer to Figure 1
Avalanche Current
IAS
13.3
A
Power Dissipation
PD
TC = 25 °C
32
W
Operating Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
55 to 150
°C
FKI06190-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
1
May. 29, 2014
http://www.sanken-ele.co.jp



Sanken FKI06190
FKI06190
Thermal Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Thermal Resistance
(Junction to Case)
RθJC
Thermal Resistance
(Junction to Ambient)
RθJA
Test Conditions
Min. Typ. Max. Unit
3.9 °C/W
62.5 °C/W
Electrical Characteristics
Unless otherwise specified, TA = 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
Test Conditions
ID = 100 μA, VGS = 0 V
VDS = 60 V, VGS = 0 V
VGS = ± 20 V
VDS = VGS, ID = 350 µA
Min.
60
1.0
Typ. Max. Unit
s
V
ign
100
µA
s
± 100 nA
De2.0
2.5
V
Static Drain to Source
w On-Resistance
ID = 19.8 A, VGS = 10 V
RDS(ON)
ID = 9.9 A, VGS = 4.5 V
e Gate Resistance
RG
f = 1 MHz
N Input Capacitance
Ciss
VDS = 25 V
r Output Capacitance
Coss
VGS = 0 V
o f = 1 MHz
f Reverse Transfer Capacitance
Crss
d Total Gate Charge (VGS = 10 V)
Qg1
e Total Gate Charge (VGS = 4.5 V)
Qg2
VDS = 30 V
d Gate to Source Charge
Qgs
ID = 19.8 A
en Gate to Drain Charge
Qgd
Turn-On Delay Time
m Rise Time
m Turn-Off Delay Time
co Fall Time
e Source to Drain Diode Forward
R Voltage
Source to Drain Diode Reverse
t Recovery Time
o Source to Drain Diode Reverse
N Recovery Charge
td(on)
tr
VDS = 30 V
ID = 19.8 A
td(off)
VGS = 10 V, RG = 4.7 Ω
Refer to Figure 2
tf
VSD
IS = 19.8 A, VGS = 0 V
trr
IF = 19.8 A
di/dt = 100 A/µs
Qrr
Refer to Figure 3
12.1
14.7
2.3
1510
175
77
19.8
9.1
3.3
3.0
2.8
3.3
13.2
6.9
0.9
31.2
37.5
16.5
21.4
1.5
Ω
pF
nC
ns
V
ns
nC
FKI06190-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
2
May. 29, 2014



Sanken FKI06190
FKI06190
Test Circuits and Waveforms
L
ID
E AS
1
2
L
I
AS
2
V(BR)DSS
V(BR)DSS VDD
V(BR)DSS
VDS
IAS
RG
VGS
VDD
VDS
VDD
0V
ID
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
Designs (b) Waveform
RL
r New RG
o VGS
d f 0 V
de P.W. = 10 μs
n Duty cycle 1 %
VDS
VDD
VGS
VDS
td(on) tr
ton
me (a) Test Circuit
Figure 2 Switching Time
td(off) tf
toff
(b) Waveform
ecom D.U.T.
R IF L
t IF
No VDD
trr
90%
10%
90%
10%
RG
VGS
0V
di/dt
IRM × 90 %
0V
IRM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
FKI06190-DS Rev.1.3
SANKEN ELECTRIC CO.,LTD.
3
May. 29, 2014







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