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RD3H045SP

INCHANGE

P-Channel MOSFET

Description
isc P-Channel MOSFET Transistor RD3H045SP FEATURES ·Drain Current –ID= -4.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -45V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 155mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and ge...


INCHANGE

RD3H045SP

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