Barrier diodes. D1065C5 Datasheet

D1065C5 diodes. Datasheet pdf. Equivalent

D1065C5 Datasheet
Recommendation D1065C5 Datasheet
Part D1065C5
Description SiC Schottky Barrier diodes
Feature D1065C5; SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW10G65C5 Final Datasheet.
Manufacture Infineon
Datasheet
Download D1065C5 Datasheet




Infineon D1065C5
SiC
Silicon Carbide Diode
5th Generation thinQ!TM
650V SiC Schottky Diode
IDW10G65C5
Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket



Infineon D1065C5
5th Generation thinQ!™ SiC Schottky Diode
1
Description
ThinQ!™ Generation 5 represents Infineon leading edge technology for the
SiC Schottky Barrier diodes. Thanks to the more compact design and thin-
wafer technology, the new family of products shows improved efficiency over
all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target applications
Breakdown voltage tested at 22 mA2)
Optimized for high temperature operation
Benefits
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Applications
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDC
650
V
QC; VR=400V
15
nC
EC; VR=400V
3.5
µJ
IF @ TC < 130°C 10
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Type / ordering Code
IDW10G65C5
Package
PG-TO247-3
Marking
D1065C5
IDW10G65C5
123
1
2
3
CASE
Related links
www.infineon.com/sic
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15



Infineon D1065C5
5th Generation thinQ!TM SiC Schottky Diode
IDW10G65C5
Table of contents
Table of Contents
1
Description .......................................................................................................................................... 2
2
Maximum ratings................................................................................................................................4
3
Thermal characteristics.....................................................................................................................4
4
Electrical characteristics...................................................................................................................5
5
Electrical characteristics diagrams..................................................................................................6
6
Simplified Forward Characteristics Model ......................................................................................8
7
Package outlines................................................................................................................................9
8
Revision History...............................................................................................................................10
Final Data Sheet
3
Rev. 2.2, 2013-01-15







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