IGBT. SKM50GD125D Datasheet

SKM50GD125D IGBT. Datasheet pdf. Equivalent

SKM50GD125D Datasheet
Recommendation SKM50GD125D Datasheet
Part SKM50GD125D
Description IGBT
Feature SKM50GD125D; SKM50GD125D SEMITRANS® 6 SKM50GD125D Features • VCE(sat) with positive temperature coefficient • Hi.
Manufacture Semikron
Datasheet
Download SKM50GD125D Datasheet




Semikron SKM50GD125D
SKM50GD125D
SEMITRANS® 6
SKM50GD125D
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• Three phase inverters for AC motor
speed control
• Pulse frequencies also above 15 kHz
• DC servo and robot drives
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
Tj = 25 °C
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
ICnom
ICRM
ICRM = 2xICnom
VGES
tpsc
Tj
VCC = 600 V
VGE 15 V
VCES 1200 V
Tj = 125 °C
Inverse diode
IF
Tj = 150 °C
Tc = 25 °C
Tc = 80 °C
IFnom
IFRM
IFRM = 2xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tstg
Tterminal = 80 °C
Visol
AC sinus 50 Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
IC = 50 A
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE = 15 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VGE=VCE, IC = 2 mA
VGE = 0 V
VCE = 1200 V
Tj = 25 °C
VCE = 25 V
VGE = 0 V
f = 1 MHz
f = 1 MHz
f = 1 MHz
VGE = - 8 V...+ 20 V
Tj = 25 °C
VCC = 600 V
IC = 50 A
VGE = ±15 V
RG on = 8
RG off = 8
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Tj = 125 °C
Eoff
Tj = 125 °C
Rth(j-c)
per IGBT
Values
1200
73
50
50
100
-20 ... 20
10
-55 ... 150
77
53
55
110
720
-40 ... 150
100
-40 ... 125
4000
Unit
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
°C
V
min.
typ.
max. Unit
3.20
3.70
V
3.60
4.20
V
1.5
1.75
V
1.7
1.95
V
34.00 39.00 m
38.00 45.00 m
4.5
5.5
6.5
V
0.1
0.3
mA
mA
3.3
nF
0.50
nF
0.22
nF
442
nC
0.00
25
ns
19
ns
8
mJ
184
ns
8
ns
3.2
mJ
0.32 K/W
GD
© by SEMIKRON
Rev. 2 – 05.12.2012
1



Semikron SKM50GD125D
SKM50GD125D
SEMITRANS® 6
SKM50GD125D
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self limiting
to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
Typical Applications*
• Three phase inverters for AC motor
speed control
• Pulse frequencies also above 15 kHz
• DC servo and robot drives
Characteristics
Symbol Conditions
Inverse diode
VF = VEC
IF = 55 A
VGE = 0 V
chiplevel
Tj = 25 °C
Tj = 125 °C
VF0
chiplevel
Tj = 25 °C
Tj = 125 °C
rF
IRRM
Qrr
Err
Rth(j-c)
chiplevel
Tj = 25 °C
Tj = 125 °C
IF = 50 A
Tj = 125 °C
di/dtoff = 3200 A/µs
VGE = ±15 V
Tj = 125 °C
VCC = 600 V
Tj = 125 °C
per diode
Module
LCE
RCC'+EE'
terminal-chip
TC = 25 °C
TC = 125 °C
Rth(c-s)
per module
Ms
to heat sink M6
Mt
w
min.
typ.
max. Unit
2.00
2.50
V
1.80
2.30
V
1.1
1.45
V
0.85
1.2
V
16.4
19.1 m
17.3
20.0 m
75
A
7
µC
2.1
mJ
0.6 K/W
60
nH
m
m
0.05 K/W
4
5
Nm
Nm
Nm
175
g
GD
2
Rev. 2 – 05.12.2012
© by SEMIKRON



Semikron SKM50GD125D
SKM50GD125D
Fig. 1: Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2: Rated current vs. temperature IC = f (TC)
Fig. 3: Typ. turn-on /-off energy = f (IC)
Fig. 4: Typ. turn-on /-off energy = f (RG)
Fig. 6: Typ. gate charge characteristic
Fig. 7: Typ. switching times vs. IC
© by SEMIKRON
Rev. 2 – 05.12.2012
3







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