Power MOSFET. IRFI640GPbF Datasheet

IRFI640GPbF MOSFET. Datasheet pdf. Equivalent

IRFI640GPbF Datasheet
Recommendation IRFI640GPbF Datasheet
Part IRFI640GPbF
Description Power MOSFET
Feature IRFI640GPbF; Power MOSFET IRFI640G, SiHFI640G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (.
Manufacture Vishay
Datasheet
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Vishay IRFI640GPbF
Power MOSFET
IRFI640G, SiHFI640G
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
70
13
39
Single
0.18
TO-220 FULLPAK
D
G
GDS
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kVRMS (t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
Available
RoHS*
COMPLIANT
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. The isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
TO-220 FULLPAK
IRFI640GPbF
SiHFI640G-E3
IRFI640G
SiHFI640G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 6.7 mH, RG = 25 Ω, IAS = 9.8 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91150
S09-0013-Rev. A, 19-Jan-09
LIMIT
200
± 20
9.8
6.2
39
0.32
430
9.8
4.0
40
5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
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1



Vishay IRFI640GPbF
IRFI640G, SiHFI640G
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
RthJA
RthJC
TYP.
-
-
MAX.
65
3.1
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 µA
VGS = ± 20 V
VDS = 200 V, VGS = 0 V
VDS = 160 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 5.9 Ab
VDS = 50 V, ID = 5.9 Ab
200
-
-
V
-
0.29
-
V/°C
2.0
-
4.0
V
-
-
± 100 nA
-
-
25
µA
-
-
250
-
-
0.18
Ω
5.2
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
Ciss
Coss
Crss
C
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
f = 1.0 MHz
-
1300
-
-
400
-
pF
-
130
-
-
12
-
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
-
VGS = 10 V
ID = 18 A, VDS = 160 V,
see fig. 6 and 13b
-
-
-
VDD = 100 V, ID = 18 A,
-
RG = 9.1 Ω, RD= 5.4 Ω,
see fig. 10b
-
-
-
70
-
13
nC
-
39
14
-
51
-
ns
45
-
36
-
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS
die contact
S
-
4.5
-
nH
-
7.5
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
9.8
A
-
-
39
Body Diode Voltage
VSD
TJ = 25 °C, IS = 9.8 A, VGS = 0 Vb
-
-
2.0
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
300
610
ns
TJ = 25 °C, IF = 18 A, dI/dt = 100 A/µsb
Qrr
-
3.4
7.1
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2
www.vishay.com
2
Document Number: 91150
S09-0013-Rev. A, 19-Jan-09



Vishay IRFI640GPbF
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
IRFI640G, SiHFI640G
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, TC= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91150
S09-0013-Rev. A, 19-Jan-09
www.vishay.com
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