LINE DRIVER. iC-WE Datasheet

iC-WE DRIVER. Datasheet pdf. Equivalent

iC-WE Datasheet
Recommendation iC-WE Datasheet
Part iC-WE
Description 3-CHANNEL LINE DRIVER
Feature iC-WE; iC-WE 3-CHANNEL 75 Ω LINE DRIVER FEATURES Ë 3 current-limited and short-circuit-proof push-pull driv.
Manufacture iC-Haus
Datasheet
Download iC-WE Datasheet




iC-Haus iC-WE
iC-WE
3-CHANNEL 75 LINE DRIVER
FEATURES
Ë 3 current-limited and short-circuit-proof push-pull drivers
Ë Built-in adaption to 75 characteristic impedance
Ë High driver current of 300 mA at 24 V typ.
Ë Low saturation voltage up to 30 mA load current
Ë Short switching times and high slew rates by npn circuitry
Ë Wide driver supply range VB = 4.5 V to 30 V
Ë Internal free-wheeling diodes to VB and GND
Ë Schmitt trigger inputs with integrated pull-up current sources
Ë Inputs compatible to TTL and CMOS
Ë Inverting and non-inverting driver mode
Ë Bus capability due to Tri-State switching
Ë Compatible to EIA standard RS-422
Ë Thermal shutdown with hysteresis
Ë Short-circuit-proof OC error output reports thermal shutdown
or undervoltage at VCC or VB
Ë Driver disabled in case of fault
Ë extended temperature range of up to 130 °C in
TSSOP20tp 4.4 mm package
Rev D1, Page 1/10
APPLICATIONS
Ë 24 V signal transfer
Ë Line driver in PLC environment
PACKAGES
SO20
TSSOP20
thermal pad
SO16W
BLOCK DIAGRAM
Copyright © 2003, iC-Haus
10 TNER MODE
2
VCC
ERROR
12
VB
NER 3
8 TRI
9 INV
SO20
LOW VOLTAGE
T.SHUTDOWN
iC-WE
1 E1
A1 11
CHAN 1
20 E2
CHAN 2
A2 13
19 E3
CHAN 3
GND
4-7,14-17
A3 18
www.ichaus.com



iC-Haus iC-WE
iC-WE
3-CHANNEL 75 LINE DRIVER
Rev D1, Page 2/10
DESCRIPTION
The iC-WE is a high-speed monolithic line driver circuit for three independent channels with built-in
characteristic impedance adaption for 75lines. The push-pull outputs are designed for a high driver power
of typ. 300mA at 24V. They are current-limited and short-circuit protected by thermal shut-down at over-
temperature. Clamp diodes to VB and to GND protect the IC outputs against echoes of mismatched lines and
against damage due to ESD according to MIL-STD-883.
All inputs are Schmitt triggers and contain current sources from the 5V supply VCC which select a defined
High Level without external wiring. Clamp diodes to VCC and to GND furnish ESD protection.
Using the INVert input it is possible to switch all channels to inverting or non-inverting operation. This enables
a data transmission with balanced line activation using two iC-WE devices. For bus applications the final
stages can be forced to a high impedance state using the TRI-State input.
The circuit monitors supply voltages VB and VCC as well as the chip temperature and switches all final stages
to high impedance in the event of a fault. The NER output which is constructed as an open collector and is
also short-circuit proof reports the fault via the connected line. The error input TNER can be linked to message
outputs of other ICs and allows iC-WE to report a system fault message. If the supply voltage VCC cancels,
NER becomes highly resistive.
PACKAGES SO20, SO16W, TSSOP20 to JEDEC Standard
PIN CONFIGURATION, top view
(scale 2:1)
SO20
SO16W
(low power applications only)
TSSOP20tp 4.4 mm
PIN FUNCTIONS
Name Function
VCC
E1
E2
E3
TRI
INV
TNER
+5 V (± 10 %) Input Supply Voltage
Channel 1 Input
Channel 2 Input
Channel 3 Input
Tristate Input, high active
Invert Mode Input, high active
Error Input
Name
VB
A1
A2
A3
NER
GND
Function
+4.5..+30 V Driver Supply Voltage
Channel 1 Output
Channel 2 Output
Channel 3 Output
Error Output, low active
Ground
To enhance heat removal, the TSSOP20 package offers a large area pad to be soldered (a connection is
only permitted to GND).



iC-Haus iC-WE
iC-WE
3-CHANNEL 75 LINE DRIVER
Rev D1, Page 3/10
ABSOLUTE MAXIMUM RATINGS
Values beyond which damage may occur; device operation is not guaranteed.
Item Symbol Parameter
Conditions
Fig.
G001 VCC
G002 VB
G003 I(A)
G004 I(E)
G005 V(NER)
G006 I(NER)
E001 Vd()
TG1 Tj
TG2 Ts
Supply Voltage
Driver Supply Voltage
Output Current in A1..3
Input Current in E1..3, INV, TRI, TNER
Voltage at NER
Current in NER
ESD Susceptibility
at all pins
MIL-STD-883, Method 3015, HBM
100 pF discharged through 1.5 k
Operating Junction Temperature
Storage Temperature Range
Min.
0
0
-800
-4
-40
-40
Unit
Max.
7
V
32
V
800
mA
4
mA
32
V
25
mA
2
kV
165
°C
150
°C
THERMAL DATA
Operating Conditions: VB = 4.5..30 V, VCC = 5 V ± 10 %
Item Symbol Parameter
Conditions
Fig.
Unit
Min. Typ. Max.
T1 Ta
T2 Rthja
T3 Rthja
Operating Ambient Temperature
iC-WE SO16W
Range
iC-WE SO20, iC-WE TSSOP20
(extended range to -40 °C on request)
Thermal Resistance SO20
Chip to Ambient
surface mounted with ca. 2 cm2 heat
sink at leads (see Demo Board)
Thermal Resistance SO16W
Chip to Ambient
surface mounted with ca. 2 cm2 heat
sink at leads
-25
125 °C
-25
130 °C
35
45 K/W
55
75 K/W
T4 Rthja
Thermal Resistance TSSOP20
Chip to Ambient
surface mounted, thermal pad
soldered to ca. 2 cm2 heat sink
30
40 K/W
All voltages are referenced to ground unless otherwise noted.
All currents into the device pins are positive; all currents out of the device pins are negative.







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