Image Sensor. IMX327LQR-C Datasheet

IMX327LQR-C Sensor. Datasheet pdf. Equivalent

IMX327LQR-C Datasheet
Recommendation IMX327LQR-C Datasheet
Part IMX327LQR-C
Description CMOS Solid-state Image Sensor
Feature IMX327LQR-C; Diagonal 6.46 mm (Type 1/2.8) CMOS Solid-state Image Sensor with Square Pixel for Color Cameras Te.
Manufacture Sony
Datasheet
Download IMX327LQR-C Datasheet




Sony IMX327LQR-C
Diagonal 6.46 mm (Type 1/2.8) CMOS Solid-state Image Sensor with Square Pixel for
Color Cameras
Tentative
IMX327LQR-C
Description
The IMX327LQR-C is a diagonal 6.46 mm (Type 1/2.8) CMOS active pixel type solid-state image sensor with a
square pixel array and 2.13 M effective pixels. This chip operates with analog 2.9 V, digital 1.2 V, and interface 1.8 V
triple power supply, and has low power consumption. High sensitivity, low dark current and no smear are achieved
through the adoption of R, G and B primary color mosaic filters. This chip features an electronic shutter with variable
charge-integration time.
(Applications: Surveillance cameras, FA cameras, Industrial cameras)
Features
CMOS active pixel type dots
Built-in timing adjustment circuit, H/V driver and serial communication circuit
Input frequency: 74.25 MHz / 37.125 MHz
Number of recommended recording pixels: 1920 (H) × 1080 (V) approx. 2.07M pixel
Readout mode
All-pixel scan mode
720p-HD readout mode
Window cropping mode
Vertical / Horizontal direction-normal / inverted readout mode
Readout rate
Maximum frame rate in Full HD 1080p mode: 60 frame / s
Wide dynamic range (WDR) function
Multiple exposure WDR
Digital overlap WDR
Variable-speed shutter function (resolution 1H units)
10-bit / 12-bit A/D converter
Conversion gain switching (HCG Mode / LCG Mode)
CDS / PGA function
0 dB to 27 dB: Analog Gain 27 dB (step pitch 0.3 dB)
27.3 dB to 69 dB: Analog Gain 27 dB + Digital Gain 0.3 to 42 dB (step pitch 0.3 dB)
Supports I/O switching
Low voltage LVDS (150 m Vp-p) serial ( 2 ch / 4 ch switching) DDR output
CSI-2 serial data output ( 2 Lane / 4 Lane, RAW10 / RAW12 output)
Recommended exit pupil distance: –30 mm to –
Sony Semiconductor Solutions Corporation reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony Semiconductor Solutions
Corporation cannot assume responsibility for any problems arising out of the use of these circuits.
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Sony IMX327LQR-C
Device Structure
CMOS image sensor
Image size
Type 1/2.8
Total number of pixels
1945 (H) × 1109 (V) approx. 2.16 M pixels
Number of effective pixels
1945 (H) × 1097 (V) approx. 2.13 M pixels
Number of active pixels
1937 (H) × 1097 (V) approx. 2.12 M pixels
Number of recommended recording pixels
1920 (H) × 1080 (V) approx. 2.07 M pixels
Unit cell size
2.9 µm (H) × 2.9 µm (V)
Optical black
Horizontal (H) direction: Front 0 pixels, rear 0 pixels
Vertical (V) direction: Front 10 pixels, rear 0 pixels
Dummy
Horizontal (H) direction: Front 0 pixels, rear 3 pixels
Vertical (V) direction: Front 0 pixels, rear 0 pixels
Substrate material
Silicon
IMX327LQR-C
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Sony IMX327LQR-C
IMX327LQR-C
Absolute Maximum Ratings
Item
Supply voltage (analog 2.9 V)
Supply voltage (interface 1.8 V)
Supply voltage (digital 1.2 V)
Input voltage
Output voltage
Symbol
Min.
Max.
Unit
Remarks
AVDD
-0.3
3.3
V
OVDD
-0.3
3.3
V
DVDD
-0.3
2.0
V
VI
-0.3
OVDD + 0.3 V Not exceed 3.3 V
VO
-0.3
OVDD + 0.3 V Not exceed 3.3 V
Application Conditions
Item
Symbol
Min.
Typ.
Max.
Unit
Supply voltage (analog 2.9 V)
AVDD
2.80
2.90
3.00
V
Supply voltage (Interface 1.8 V)
OVDD
1.70
1.80
1.90
V
Supply voltage (digital 1.2 V)
DVDD
1.10
1.20
1.30
V
Performance guarantee temperature Tspec
-10
60
˚C
Operating guarantee temperature
Topr
-30
85
˚C
Storage guarantee temperature
Tstg
-40
85
˚C
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