Power Amplifier. CMPA801B030S Datasheet

CMPA801B030S Amplifier. Datasheet pdf. Equivalent

CMPA801B030S Datasheet
Recommendation CMPA801B030S Datasheet
Part CMPA801B030S
Description GaN MMIC Power Amplifier
Feature CMPA801B030S; CMPA801B030S 7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier Description Cree’s CMPA801B030S.
Manufacture Wolfspeed
Datasheet
Download CMPA801B030S Datasheet




Wolfspeed CMPA801B030S
CMPA801B030S
7.9 - 11.0 GHz, 40 W, Packaged GaN MMIC Power Amplifier
Description
Cree’s CMPA801B030S is a packaged, 40W HPA utilizing Cree’s high performance,
0.15um GaN on SiC production process. The CMPA801B030S operates from
7.9-11.0 GHz and targets pulsed radar systems supporting both defense and
commercial applications. With 2 stages of gain, this high performance amplifier
provides 20dB of large signal gain and 40% efficiency to support lower system
DC power requirements and simplify system thermal management solutions.
Packaged in a 7x7 mm plastic overmold QFN, the CMPA801B030S also supports
reduced board space requirements and high-throughput manufacturing lines.
PN: CMPA801B030S
Package Type: 7x7 QFN
Typical Performance Over 7.9 - 11.0 GHz (TC = 25˚C)
Parameter
Small Signal Gain
Output Power
Power Gain
Power Added Efficiency
8.0 GHz
28.2
39.3
19.9
38.2
8.5 GHz
27.5
45.9
20.6
40.6
9.0 GHz
27.1
48.9
21.0
41.3
Notes: PIN = 26 dBm, Pulse Width = 100 μs; Duty Cycle = 10%
10.0 GHz
24.6
42.3
20.3
39.4
11.0 GHz
24.0
40.7
20.1
37.0
Units
dB
W
dB
%
Features
Freq: 7.9 – 11.0 GHz
Psat: 40 W
PAE: 40%
LS Gain: 20 dB
7x7 mm Overmold QFN
Lower system costs
Reduced board area
Note: Features are typical performance across
frequency under 25°C operation. Please reference
performance charts for additional details.
Applications
Military pulsed radar
Civil pulsed radar
Satellite Communications
Figure 1.
Rev 0.1 – February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CMPA801B030S
CMPA801B030S
2
Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Maximum Forward Gate Current
Maximum Drain Current
Soldering Temperature
Symbol
VDSS
VGS
TSTG
IG
IDMAX
TS
Rating
84
-8, +2
-65, +150
12
6
260
Units
VDC
VDC
˚C
mA
A
˚C
Conditions
25°C
25°C
25°C
Electrical Characteristics (Frequency = 7.9 GHz to 11.0 GHz unless otherwise stated; TC = 25˚C)
Characteristics
Symbol Min. Typ. Max. Units Conditions
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current1
Drain-Source Breakdown Voltage
RF Characteristics2,3
VGS(TH)
VGS(Q)
IDS
VBD
-2.6
-
-1.6
-1.75
4
84
V VDS = 10 V, ID = 13 mA
VDC VDD = 28 V, IDQ = 800 mA
A VDS = 6.0 V, VGS = 2.0 V
V VGS = -8 V, ID = 13 mA
Small Signal Gain
S211
28.2
dB VDD = 28 V, IDQ = 800 mA, Freq = 8.0 GHz
Small Signal Gain
S212
27.5
dB VDD = 28 V, IDQ = 800 mA, Freq = 8.5 GHz
Small Signal Gain
S213
27.1
dB VDD = 28 V, IDQ = 800 mA, Freq = 9.0 GHz
Small Signal Gain
S214
24.6
dB VDD = 28 V, IDQ = 800 mA, Freq = 10.0 GHz
Small Signal Gain
S215
24.0
dB VDD = 28 V, IDQ = 800 mA, Freq = 11.0 GHz
Output Power
POUT1
39.3
W VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 8.0 GHz
Output Power
POUT2
45.9
W VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 8.5 GHz
Output Power
POUT3
48.9
W VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 9.0 GHz
Output Power
POUT4
42.3
W VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 10.0 GHz
Output Power
POUT5
40.7
W VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 11.0 GHz
Power Added Efficiency
PAE1
38
% VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 8.0 GHz
Power Added Efficiency
PAE2
41
% VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 8.5 GHz
Power Added Efficiency
PAE3
41
% VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 9.0 GHz
Power Added Efficiency
PAE4
39
% VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 10.0 GHz
Power Added Efficiency
PAE5
37
% VDD = 28 V, IDQ = 800 mA, PIN = 26 dBm, Freq = 11.0 GHz
Power Gain
GP
21.0
dB VDD = 28 V, IDQ = 800 mA
Input Return Loss
S11
-13
dB VDD = 28 V, IDQ = 800 mA
Output Return Loss
Output Mismatch Stress
S22
-10
dB VDD = 28 V, IDQ = 800 mA
VSWR
5 : 1 Y No damage at all phase angles, VDD = 28 V, IDQ = 800 mA
Notes:
1 Scaled from PCM data
2 All data tested in CMPA801B030S-AMP1
3 Pulse Width = 100 μs; Duty Cycle = 10%
Rev 0.1 – February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CMPA801B030S
CMPA801B030S
Thermal Characteristics
Parameter
Operating Junction Temperature
Thermal Resistance, Junction to Case (packaged)1
Notes:
1Measured for the CMPA801B030S at PDISS = 25.5 W
3
Symbol
TJ
RθJC
Rating
225
2.5
Units
˚C
˚C/W
Conditions
100 μs, 10%, PDISS = 25.5 W
Rev 0.1 – February 2021
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com







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