HEMT Die. CGHV1J070D Datasheet

CGHV1J070D Die. Datasheet pdf. Equivalent

CGHV1J070D Datasheet
Recommendation CGHV1J070D Datasheet
Part CGHV1J070D
Description GaN HEMT Die
Feature CGHV1J070D; CGHV1J070D 70 W, 18.0 GHz, GaN HEMT Die Description Cree’s CGHV1J070D is a high voltage gallium nitr.
Manufacture Wolfspeed
Datasheet
Download CGHV1J070D Datasheet




Wolfspeed CGHV1J070D
CGHV1J070D
70 W, 18.0 GHz, GaN HEMT Die
Description
Cree’s CGHV1J070D is a high voltage gallium nitride (GaN)
High Electron Mobility Transistor (HEMT) on a silicon
carbide substrate, using a 0.25 μm gate length fabrication
process. This GaN-on-SiC product offers superior high
frequency, high efficiency features. It is ideal for a variety of
applications operating from 10 MHz to 18 GHz at 40 V with a
high breakdown voltage.
PN: CGHV1J070D
Features
17 dB Typ. Small Signal Gain at 10 GHz
60% Typ. PAE at 10 GHz
70 W Typical PSAT
40 V Operation
Up to 18 GHz Operation
Applications
Satellite Communications
PTP Communications Links
Marine Radar
Pleasure Craft Radar
Port Vessel Traffic Services
Broadband Amplifiers
High Efficiency Amplifiers
Packaging Information
Bare die are shipped in Gel-Pak® containers
Non-adhesive tacky membrane immobilizes die during shipment
Large Signal Models Available for ADS and MWO
Rev 1.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CGHV1J070D
CGHV1J070D
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Storage Temperature
TSTG
Operating Junction Temperature
TJ
Maximum Forward Gate Current
IGMAX
Maximum Drain Current1
IDMAX
Thermal Resistance, Junction to Case (packaged)2
RθJC
Thermal Resistance, Junction to Case (die only)2
RθJC
Mounting Temperature
TS
Note1 Current limit for long term, reliable operation
Note2 Eutectic die attach using 80/20 AuSn mounted to a 60 mil thick CMC carrier.
Rating
120
-10, +2
-65, +150
225
14.4
6.0
1.8
1.1
320
Units
Volts
Volts
˚C
˚C
mA
A
˚C/W
˚C/W
˚C
2
Conditions
25˚C
25˚C
25˚C
25˚C
85˚C
85˚C
30 seconds
Electrical Characteristics (Frequency = 10 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics
Symbol Min. Typ.
Max. Units Conditions
Gate Threshold Voltage
V(GS)TH
-3.8
-3.0
Gate Quiescent Voltage
V(GS)Q
-2.7
Saturated Drain Current1
ISAT
11.5
13.0
Drain-Source Breakdown Voltage VBD
100
On Resistance
RON
0.2
Gate Forward Voltage
RF Characteristics
VG-ON
1.85
-2.3
V
VDS = 10 V, ID = 14.4 mA
VDC VDD = 40 V, IDQ = 720 mA
A
VDS = 6.0 V, VGS = 2.0 V
V
VGS = -8 V, ID = 14.4 mA
Ω
VDS = 0.1 V, VGS = 0 V
V
IGS = 14.4 mA
Small Signal Gain
Saturated Power Output1
Drain Efficiency2
Intermodulation Distortion
Output Mismatch Stress
Dynamic Characteristics
GSS
PSAT
η
IM3
VSWR
17
dB
VDD = 40 V, IDQ = 720 mA
70
W
VDD = 40 V, IDQ = 720 mA
60
%
VDD = 40 V, IDQ = 720 mA
-30
dBc
VDD = 40 V, IDQ = 720 mA, POUT = 70 W PEP
No damage at all phase angles,
10 : 1 Y
VDD = 40 V, IDQ = 720 mA, POUT = 70 W CW
Input Capacitance
Output Capacitance
Feedback Capacitance
Notes:
1 Scaled from PCM unit cell
2 PSAT is defined as IG = 1.44 mA
3 Drain Efficiency = POUT / PDC
CGS
CDS
CGD
24.0
4.2
0.6
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
pF
VDS = 28 V, Vgs = -8 V, f = 1 MHz
Rev 1.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com



Wolfspeed CGHV1J070D
CGHV1J070D
3
DIE Dimensions (units in microns)
Overall die size 800 x 4800 (+0/- 50) microns, die thickness 100 (+/- 10) microns.
All Gate and Drain pads must be wire bonded for electrical connection.
Pad
Drain
Gate
Interconnect
Size (microns)
200 x 100
200 x 100
80 x 80
Assembly Notes:
Recommended solder is AuSn (80/20) solder. Refer to Cree’s website for the Eutectic Die Bond Procedure
application note at http://www.cree.com/products/wireless_documents.asp
Vacuum collet is the preferred method of pick-up
The backside of the die is the Source (ground) contact
Die back side gold plating is 5 microns thick minimum
Thermosonic ball or wedge bonding are the preferred connection methods
Gold wire must be used for connections
Use the die label (XX-YY) for correct orientation
Electrostatic Discharge (ESD) Classifications
Parameter
Human Body Model
Charge Device Model
Symbol
HBM
CDM
Class
1A (> 250 V)
2 (125 V to 250 V)
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Rev 1.1 – April 2020
4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com







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