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VSM002NE4MS-G

Part Number	VSM002NE4MS-G
Manufacturer	Vanguard Semiconductor
Description	N-Channel Advanced Power MOSFET
Published	Apr 12, 2021
Detailed Description	Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High ef...
Datasheet	VSM002NE4MS-G PDF File

Overview

Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSM002NE4MS-G 45V/200A N-Channel Advanced Power MOSFET V DS 45 V R @ DS(on),TYP VGS=10 V 1.
8 mΩ R @ DS(on),TYP VGS=4.
5 V 2.
7 mΩ ID 200 A TO-263 Part ID VSM002NE4MS-G Package Type TO-263 Marking 002NE4M Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested...

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VSM002NE4MS-G N-Channel Advanced Power MOSFET - Vanguard Semiconductor

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