N-Channel MOSFET. FCPF250N65S3L1-F154 Datasheet

FCPF250N65S3L1-F154 MOSFET. Datasheet pdf. Equivalent

FCPF250N65S3L1-F154 Datasheet
Recommendation FCPF250N65S3L1-F154 Datasheet
Part FCPF250N65S3L1-F154
Description N-Channel MOSFET
Feature FCPF250N65S3L1-F154; MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 12 A, 250 mW FCPF250N65S3L1-F154 Descrip.
Manufacture ON Semiconductor
Datasheet
Download FCPF250N65S3L1-F154 Datasheet




ON Semiconductor FCPF250N65S3L1-F154
MOSFET – Power, N-Channel,
SUPERFET[ III, Easy Drive
650 V, 12 A, 250 mW
FCPF250N65S3L1-F154
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 210 mW
Ultra Low Gate Charge (Typ. Qg = 24 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
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VDSS
650 V
RDS(ON) MAX
250 mW @ 10 V
ID MAX
12 A
D
G
S
POWER MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
250N65S3
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF250N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF250N65S3L1F154/D



ON Semiconductor FCPF250N65S3L1-F154
FCPF250N65S3L1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
ID
Drain Current
Continuous (TC = 25°C)
12*
Continuous (TC = 100°C)
7.6*
IDM
Drain Current
Pulsed (Note 1)
30*
EAS
Single Pulsed Avalanche Energy (Note 2)
57
IAS
Avalanche Current (Note 2)
2.3
EAR
Repetitive Avalanche Energy (Note 1)
0.31
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
31
W
0.25
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. IAS = 2.3 A, RG = 25 W, starting TJ = 25°C.
3. ISD 6 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
4.07
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCPF250N65S3L1
FCPF250N65S3
TO220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
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2



ON Semiconductor FCPF250N65S3L1-F154
FCPF250N65S3L1F154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C
VGS = 0 V, ID = 1 mA, TJ = 150_C
ID = 1 mA, Referenced to 25_C
650
700
0.67
V
V
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
1
mA
0.77
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.29 mA
VGS = 10 V, ID = 6 A
VDS = 20 V, ID = 6 A
2.5
4.5
V
210
250
mW
7.4
S
Ciss
Input Capacitance
VDS = 400 V, VGS = 0 V, f = 1 MHz
1010
pF
Coss
Output Capacitance
25
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
248
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
33
pF
Qg(tot)
Qgs
Total Gate Charge at 10 V
Gate to Source Gate Charge
VDS = 400 V, ID = 6 A, VGS = 10 V
(Note 4)
24
nC
6.1
nC
Qgd
Gate to Drain “Miller” Charge
9.7
nC
ESR
Equivalent Series Resistance
f = 1 MHz
8.7
W
SWITCHING CHARACTERISTICS
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 6 A, VGS = 10 V,
18
ns
Rg = 4.7 W
(Note 4)
18
ns
td(off)
Turn-Off Delay Time
49
ns
tf
Turn-Off Fall Time
12
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
12
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
30
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 6 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 6 A,
dIF/dt = 100 A/ms
251
ns
3.4
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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