N-Channel MOSFET. FCPF360N65S3R0 Datasheet

FCPF360N65S3R0 MOSFET. Datasheet pdf. Equivalent

FCPF360N65S3R0 Datasheet
Recommendation FCPF360N65S3R0 Datasheet
Part FCPF360N65S3R0
Description N-Channel MOSFET
Feature FCPF360N65S3R0; MOSFET – Power, N-Channel, SUPERFET[ III, Easy Drive 650 V, 10 A, 360 mW FCPF360N65S3R0L-F154 Descri.
Manufacture ON Semiconductor
Datasheet
Download FCPF360N65S3R0 Datasheet




ON Semiconductor FCPF360N65S3R0
MOSFET – Power, N-Channel,
SUPERFET[ III, Easy Drive
650 V, 10 A, 360 mW
FCPF360N65S3R0L-F154
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET
Easy drive series helps manage EMI issues and allows for easier
design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 310 mW
Ultra Low Gate Charge (Typ. Qg = 18 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
360 mW @ 10 V
D
ID MAX
10 A
G
S
N-Channel MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF360
N65S3R0
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
FCPF360N65S3R0 = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
December, 2020 Rev. 0
Publication Order Number:
FCPF360N65S3R0LF154/D



ON Semiconductor FCPF360N65S3R0
FCPF360N65S3R0LF154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
10*
Continuous (TC = 100°C)
6*
IDM
Drain Current
Pulsed (Note 1)
25*
EAS
Single Pulsed Avalanche Energy (Note 2)
40
IAS
Avalanche Current (Note 2)
2.1
EAR
Repetitive Avalanche Energy (Note 1)
0.27
dv/dt
MOSFET dv/dt
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
27
W
0.22
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 2.1 A, RG = 25 W, starting TJ = 25°C.
3. ISD 5 A, di/dt 200 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
4.56
62.5
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCPF360N65S3R0L FCPF360N65S3R0
TO220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 Units
www.onsemi.com
2



ON Semiconductor FCPF360N65S3R0
FCPF360N65S3R0LF154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C
VGS = 0 V, ID = 1 mA, TJ = 150_C
ID = 1 mA, Referenced to 25_C
650
V
700
V
0.68
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125_C
VGS = ±30 V, VDS = 0 V
1
mA
0.58
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.2 mA
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
2.5
4.5
V
310
360
mW
6
S
Ciss
Coss
Coss(eff.)
Coss(er.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Effective Output Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 400 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V
VDS = 0 V to 400 V, VGS = 0 V
VDS = 400 V, ID = 5 A, VGS = 10 V
(Note 4)
f = 1 MHz
730
pF
15
pF
173
pF
26
pF
18
nC
4.3
nC
7.6
nC
1
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 5 A,
VGS = 10 V, Rg = 4.7 W
(Note 4)
12
ns
11
ns
34
ns
10
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
ISM
Maximum Pulsed Source to Drain Diode Forward Current
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, ISD = 5 A
10
A
25
A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 5 A,
dIF/dt = 100 A/ms
241
ns
2.4
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)