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NTBG060N090SC1

ON Semiconductor

SiC MOSFET

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 60 mohm, 900 V, M2, D2PAK-7L NTBG060N090SC1 Features Typ. RDS(on) = 60 mW @ VGS = 15 V Typ. RDS(on) = 43 mW @ VGS = 18 V Ultra Low Gate Charge (QG(tot) = 88 nC) High Speed Switching with Low Capacitance (Coss = 115 pF) 100% Avalanche Tested TJ = 175°C This Device is Halide Fr...


ON Semiconductor

NTBG060N090SC1

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