N-Channel MOSFET. NTB7D3N15MC Datasheet

NTB7D3N15MC MOSFET. Datasheet pdf. Equivalent

NTB7D3N15MC Datasheet
Recommendation NTB7D3N15MC Datasheet
Part NTB7D3N15MC
Description N-Channel MOSFET
Feature NTB7D3N15MC; MOSFET - N-Channel Shielded Gate PowerTrench[ 150 V, 7.3 mW, 101 A NTB7D3N15MC Features • Shielded.
Manufacture ON Semiconductor
Datasheet
Download NTB7D3N15MC Datasheet




ON Semiconductor NTB7D3N15MC
MOSFET - N-Channel
Shielded Gate PowerTrench[
150 V, 7.3 mW, 101 A
NTB7D3N15MC
Features
Shielded Gate MOSFET Technology
Max RDS(on) = 7.3 mW at VGS = 10 V, ID = 62 A
50% Lower Qrr than other MOSFET Suppliers
Lowers Switching Noise/EMI
100% UIL Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Motor Drives and Uninterruptible Power Supplies
Micro Solar Inverter
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
DraintoSource Voltage
VDSS
150
V
GatetoSource Voltage
VGS
±20
V
Continuous Drain
Current RqJC
(Note 2)
Power Dissipation
RqJC (Note 2)
ID
Steady
State
TC = 25°C
PD
101
A
166 W
Continuous Drain
Current RqJA
(Notes 1, 2)
Power Dissipation
RqJA (Notes 1, 2)
ID
Steady
State
TA = 25°C
PD
15.2 A
3.75 W
Pulsed Drain Current TC = 25°C, tp = 100 ms IDM
488
A
Operating Junction and Storage Temperature
Range
TJ, Tstg 55 to °C
+175
Single Pulse DraintoSource Avalanche
Energy (IL = 20 Apk, L = 3 mH)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
600 mJ
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using a 1 in2, 2 oz. Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
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V(BR)DSS
150 V
RDS(ON) MAX
7.3 mW @ 10 V
ID MAX
101 A
D
G
S
NCHANNEL MOSFET
12
3
4
D2PAK
TO263
CASE 418AJ
MARKING
DIAGRAM
4
Drain
NTB7D3
N15MC
AYWWZZ
12 3
Gate Drain Source
NTB7D3N15MC = Specific Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
Device
NTB7D3N15MC
Package
D2PAK
(PbFree)
Shipping
800 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
1
December, 2020 Rev. 1
Publication Order Number:
NTB7D3N15MC/D



ON Semiconductor NTB7D3N15MC
NTB7D3N15MC
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase Steady State (Note 2)
JunctiontoAmbient Steady State (Notes 1, 2)
Symbol
RqJC
RqJA
Value
0.9
40
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
150
ID = 250 mA, ref to 25°C
VGS = 0 V,
VDS = 120 V
TJ = 25°C
VDS = 0 V, VGS = ±20 V
V
71
mV/°C
1.0
mA
±100
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 342 mA
ID = 342 mA, ref to 25°C
VGS = 10 V, ID = 62 A
VGS = 8 V, ID = 31 A
VDS = 10 V, ID = 62 A
2.5
4.5
V
7.3
mV/°C
6.0
7.3
mW
6.5
8.4
119
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
GateResistance
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Plateau Voltage
Output Charge
SWITCHING CHARACTERISTICS (Note 3)
CISS
COSS
CRSS
RG
QG(TOT)
QG(TH)
QGS
QGD
VGP
QOSS
VGS = 0 V, f = 1 MHz, VDS = 75 V
VGS = 10 V, VDS = 75 V; ID = 62 A
VDD = 75 V, VGS = 0 V
4250
1250
pF
15
0.8
1.6
W
53
14
nC
23
8.5
5.8
V
133
nC
TurnOn Delay Time
td(ON)
Rise Time
tr
TurnOff Delay Time
td(OFF)
Fall Time
tf
DRAINSOURCE DIODE CHARACTERISTICS
VGS = 10 V, VDD = 75 V,
ID = 62 A, RG = 4.7 W
27
8.5
ns
33
5.8
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 62 A
0.93 1.2
V
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, VDD = 75 V
dIS/dt = 300 A/ms, IS = 62 A
55
ns
247
nC
Reverse Recovery Time
Reverse Recovery Charge
tRR
QRR
VGS = 0 V, VDD = 75 V
dIS/dt = 1000 A/ms, IS = 62 A
50
ns
720
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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2



ON Semiconductor NTB7D3N15MC
NTB7D3N15MC
TYPICAL CHARACTERISTICS
240
10 V
180
7.0 V
8.0 V
120
60
6.0 V
VGS = 5.5 V
0
0
2
4
6
8
10
VDS, DRAINTOSOURCE VOLTAGE (V)
Figure 1. OnRegion Characteristics
2.4
2.2
ID = 62 A
VGS = 10 V
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
75 50 25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Normalized OnResistance vs.
Junction Temperature
240
VDS = 10 V
180
6
VGS = 5.5 V 6 V
5
4
Pulse Duration = 250 ms
Duty Cycle = 0.5% Max
3
8V
2
7V
1
10 V
0
0
60
120
180
240
ID, DRAIN CURRENT (A)
Figure 2. Normalized OnResistance vs. Drain
Current and Gate Voltage
40
ID = 62 A
30
20
TJ = 150°C
10
TJ = 25°C
0
4
5
6
7
8
9
10
VGS, GATETOSOURCE VOLTAGE (V)
Figure 4. OnResistance vs. GatetoSource
Voltage
300
100 VGS = 0 V
10
120
60
0
2
TJ = 25°C
TJ = 175°C
3
4
TJ = 55°C
5
6
7
VGS, GATETOSOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
1
0.1 TJ = 175°C
0.01
0.001
8
0
TJ = 25°C
0.2 0.4 0.6
TJ = 55°C
0.8 1.0
1.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. SourcetoDrain Diode Forward
Voltage vs. Source Current
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