N-Channel MOSFET. FDT4N50NZU Datasheet

FDT4N50NZU MOSFET. Datasheet pdf. Equivalent

FDT4N50NZU Datasheet
Recommendation FDT4N50NZU Datasheet
Part FDT4N50NZU
Description N-Channel MOSFET
Feature FDT4N50NZU; MOSFET - Power, N-Channel, UniFETt II, Ultra FRFETt 500 V, 2 A, 3 W FDT4N50NZU Description UniFET II.
Manufacture ON Semiconductor
Datasheet
Download FDT4N50NZU Datasheet




ON Semiconductor FDT4N50NZU
MOSFET - Power,
N-Channel, UniFETt II,
Ultra FRFETt
500 V, 2 A, 3 W
FDT4N50NZU
Description
UniFET II MOSFET is ON Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest onstate
resistance among the planar MOSFET, and also provides superior
switching performance and higher avalanche energy strength. In
addition, internal gatesource ESD diode allows UniFET II MOSFET
to withstand over 2 kV HBM surge stress. UniFET II Ultra FRFET
MOSFET has much superior body diode reverse recovery
performance. Its trr is less than 50 nsec and the reverse dv/dt immunity
is 20 V/nsec while normal planar MOSFETs have over 200 nsec and
4.5 V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET
can remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switching
power converter applications such as power factor correction (PFC),
flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Features
Typ. RDS(on) = 2.42 W
Ultra Low Gate Charge (Typ. Qg = 9.1 nC)
100% Avalanche Tested
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Computing / Display Power Supplies
Industrial Power Supplies
Consumer Power Supplies
www.onsemi.com
VDSS
500 V
RDS(ON) MAX
3 W @ 10 V
D
ID MAX
2A
G
S
POWER MOSFET
D
G
D
S
SOT223
(TO261)
CASE 318E
MARKING DIAGRAM
D
AYW
4N50U
G
DS
A
= Assembly Location
Y
= Year
W
= Work Week
4N50U = Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
February, 2021 Rev. 1
Publication Order Number:
FDT4N50NZU/D



ON Semiconductor FDT4N50NZU
FDT4N50NZU
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
ID
IDM
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
500
V
DC
±25
V
Continuous (TC = 25°C)
2
A
Continuous (TC = 100°C)
1.2
Pulsed (Note 1)
6
A
EAS
IAS
EAR
dv/dt
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
46
mJ
2
A
2
mJ
20
V/ns
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
2
W
0.02
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
NOTE: Drain current limited by maximum junction temperature.
1. Repetitive rating: pulsewidth limited by maximum junction temperature.
2. IAS = 2 A, RG = 25 W, starting TJ = 25°C.
3. ISD 3 A, di/dt 100 A/ms, VDD 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJA
Thermal Resistance, Junction to Ambient, (1 in2 Pad of 2 oz. Copper) Max.
Value
60
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Reel Size Tape Width Quantity
FDT4N50NZU
FDT4N50NZU
SOT223
Tape & Reel
330 mm
12 mm
4000 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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2



ON Semiconductor FDT4N50NZU
FDT4N50NZU
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
DBVDSS / DTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 mA, TJ = 25_C
ID = 1 mA, Referenced to 25_C
500
0.55
V
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125_C
VGS = ±25 V, VDS = 0 V
1
mA
4.6
±10
mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 1 A
VDS = 20 V, ID = 1 A
3.5
5.5
V
2.42
3
W
1
S
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10 V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
SWITCHING CHARACTERISTICS
VDS = 25 V, VGS = 0 V, f = 1 MHz
VDS = 400 V, ID = 3 A, VGS = 10 V
(Note 4)
476
pF
43
pF
2.7
pF
9.1
nC
2.9
nC
3.3
nC
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 3 A, VGS = 10 V,
16
ns
Rg = 25 W
(Note 4)
16
ns
td(off)
Turn-Off Delay Time
34
ns
tf
Turn-Off Fall Time
15
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS
Maximum Continuous Source to Drain Diode Forward Current
2
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
6
A
VSD
Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 1 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 3 A, dIF/
dt = 100 A/ms
24
ns
18
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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