N-Channel MOSFET. FCPF600N60ZL1-F154 Datasheet

FCPF600N60ZL1-F154 MOSFET. Datasheet pdf. Equivalent

FCPF600N60ZL1-F154 Datasheet
Recommendation FCPF600N60ZL1-F154 Datasheet
Part FCPF600N60ZL1-F154
Description N-Channel MOSFET
Feature FCPF600N60ZL1-F154; MOSFET – N-Channel, SUPERFET) II 600 V, 7.4 A, 600 mW FCPF600N60ZL1-F154 Description SUPERFET II MOS.
Manufacture ON Semiconductor
Datasheet
Download FCPF600N60ZL1-F154 Datasheet




ON Semiconductor FCPF600N60ZL1-F154
MOSFET – N-Channel,
SUPERFET) II
600 V, 7.4 A, 600 mW
FCPF600N60ZL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate and higher avalanche energy.
Consequently, SUPERFET II FAST MOSFET series helps minimize
various power systems and improve system efficiency.
Features
650 V @ TJ = 150°C
Typ. RDS(on) = 510 mW
Ultra Low Gate Charge (Typ. Qg = 20 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
100% Avalanche Tested
ESD Improved Capacity
These Devices are PbFree and are RoHS Compliant
Applications
Computing / Display Power Supplies
Telecom / Server Power Supplies
Industrial Power Supplies
Lighting / Charger / Adapter
www.onsemi.com
VDSS
600 V
RDS(ON) MAX
600 mW @ 10 V
ID MAX
7.4 A
D
G
S
MOSFET
GDS
TO220F Ultra Narrow Lead
CASE 221BN
MARKING DIAGRAM
$Y&Z&3&K
FCPF
600N60Z
© Semiconductor Components Industries, LLC, 2020
December, 2020 Rev. 0
$Y
&Z
&3
&K
FCPF600N60Z
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCPF600N60ZL1F154/D



ON Semiconductor FCPF600N60ZL1-F154
FCPF600N60ZL1F154
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
600
V
±20
V
±30
ID
IDM
EAS
IAS
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
7.4*
4.7*
22.2*
135
1.5
0.89
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
V/ns
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
28
W
0.22
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 Seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 1.5 A, VDD = 50 V, RG = 25 W, starting TJ = 25°C.
3. ISD 3.7 A, di/dt 200 A/ms, VDD BVDSS, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
Value
4.5
62.5
Unit
_C/W
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCPF600N60ZL1F154
FCPF600N60Z
Package
TO220F
(PbFree)
Shipping
50 Units / Tube
www.onsemi.com
2



ON Semiconductor FCPF600N60ZL1-F154
FCPF600N60ZL1F154
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
VGS = 0 V, ID = 10 mA, TJ = 25_C
600
V
VGS = 0 V, ID = 10 mA, TJ = 150_C
650
V
DBVDSS / DTJ Breakdown Voltage Temperature
Coefficient
ID = 10 mA, Referenced to 25_C
0.67
V/_C
BVDS
Drain to Source Avalanche Breakdown VGS = 0 V, ID = 7.4 A
Voltage
700
V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ON CHARACTERISTICS
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125_C
VGS = ±20 V, VDS = 0 V
1
mA
1.32
±10
mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 3.7 A
VDS = 20 V, ID = 3.7 A
2.5
3.5
V
0.51
0.6
W
6.7
S
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10 V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance
VDS = 25 V, VGS = 0 V, f = 1 MHz
840
1120
pF
630
840
pF
30
45
pF
VDS = 380 V, VGS = 0 V, f = 1 MHz
16.5
pF
VDS = 0 V to 480 V, VGS = 0 V
74
pF
VDS = 380 V, ID = 3.7 A, VGS = 10 V
(Note 4)
20
26
nC
3.4
nC
7.5
nC
f = 1 MHz
2.89
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCEDRAIN DIODE CHARACTERISTICS
VDD = 380 V, ID = 3.7 A, VGS = 10 V,
Rg = 4.7 W
(Note 4)
13
36
ns
7
24
ns
39
88
ns
9
28
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
7.4
A
ISM
Maximum Pulsed Source to Drain Diode Forward Current
22.2
A
VSD
Source to Drain Forward Voltage
VGS = 0 V, ISD = 3.7 A
1.2
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VDD = 400 V, ISD = 3.7 A,
dIF/dt = 100 A/ms
200
ns
2.3
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
www.onsemi.com
3







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)